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App. No. 10/309,022 · Confirmation No. 3762

METHOD OF FABRICATING A DIODE PROTECTING A GATE ELECTRODE OF A FIELD EFFECT TRANSISTOR

Inventor: Yasuo Yamaguchi
Patent Expired Due to NonPayment of Maintenance Fees Under 37 CFR 1.362 View Patent ↗ View Publication ↗
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 Code Description Pages PDF
2003-11-20 IFEE Issue Fee Payment (PTO-85B) 1 View
2002-12-04 TRNA Transmittal of New Application 2 View
2002-12-04 SPEC Specification 12 View
2002-12-04 CLM Claims 2 View
2002-12-04 ABST Abstract 1 View
2002-12-04 DRW Drawings-only black and white line drawings 6 View
2002-12-04 OATH Oath or Declaration filed 7 View
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Quick Facts
App. No.
10/309,022
Filed
2002-12-04
Granted
2004-01-13
Pub. No.
US20030224576A1
Examiner
DANG, PHUC T
Art Unit
2818
PTA
0 days