IP Library Granted Patent US 6,989,684
Granted Patent B2
US 6,989,684 · App. 10/309,967 · Granted Jan 24, 2006

System for and method of assessing chip acceptability and increasing yield

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Quick Facts
Patent No.
US 6,989,684
App. No.
10/309,967
Granted
Jan 24, 2006
Kind
B2
Abstract

The present invention includes a method for testing a chip, comprising the steps of measuring power drawn by the chip, calculating a test frequency using the measured power drawn by the chip, and determining performance of the chip at the calculated test frequency. The present invention also includes a system for testing a chip including a first sensor to measure power drawn by the chip, a controller to calculate a test frequency using the measured power drawn by the chip, and a second sensor to measure speed of the chip at the calculated test frequency.

Claims (72)

1. A method for testing a chip, comprising:

measuring power drawn by the chip;

calculating a test frequency using the measured power drawn by the chip (Pm), thermal resistance for the chip model (Tja) and power drawn by a worst case chip for the chip model (Pwt); and

determining performance of the chip at the calculated test frequency.

2. The method of claim 1 further comprising:

testing the chip over a range of voltages and frequencies; and

characterizing the chip according to test results of the testing.

3. The method of claim 1 , wherein the calculating a test frequency further comprises:

determining a frequency at which the chip model specifies (Fs);

determining a slope of correlation between test data for chips of a model for the chip being tested and operating frequencies for the chip model (M);

determining an offset between test data for the chip model and specified operating frequency correlation (B);

determining a chip model function temperature (Ts);

determining junction temperature of the chip (Tt); and

determining a slope of maximum operating frequency as a function of temperature for the chip model (FTS).

4. The method of claim 3 , wherein the calculating a test frequency further comprises:

performing computation according to (Fs·M+B)+([Ts−(Tja·−(PWT−Pm))]−Tt)·FTS.

5. The method of claim 3 , wherein the chip model junction temperature (Ts) is a temperature for a worst case power situation with worst case incoming air temperature and worst case thermal reference.

6. The method of claim 1 further comprising:

bringing the chip to a predetermined temperature.

7. The method of claim 1 further comprising:

checking the chip for shorts and continuity of connections.

8. The method of claim 1 further comprising:

powering up the chip.

9. The method of claim 1 further comprising:

applying a reset signal to the chip.

10. The method of claim 1 further comprising:

testing the chip over a range of voltages and frequencies;

entering test results data in a database; and

characterizing the chip according to test results.

11. A method for testing a chip, comprising:

measuring power drawn by the chip;

calculating a test frequency calculating a test frequency comprising:

determining a frequency at which the chip must operate (Fs);

determining a slope of correlation between test data for chips of a model for the chip being tested and operating frequencies for the chip model (M);

determining an offset between test data for the chip model and specified operating frequency correlation (B);

determining a chip model junction temperature (Ts);

determining a junction temperature of the chip (Tt); and,

determining a slope of maximum operating frequency as a function of temperature for the chip model (FTS); and

determining performance of the chip at the calculated test frequency.

12. The method of claim 11 wherein the calculating a test frequency further comprises:

determining a thermal resistance for the chip model (Tja);

determining a power drawn by a worst case chip for the chip model (Pwt); and

determining a measured power drawn by the chip (Pm);

13. The method of claim 12 wherein the calculating a test frequency further comprises:

performing computations according to (Fs·M+B)+([Ts−(Tja·(PWT−PM))]−Tt)·FTS.

14. The method of claim 11 further comprising:

testing the chip over a range of voltages and frequencies; and

characterizing the chip according to test results of the testing.

15. The method of claim 11 wherein the chip model junction temperature (Ts) is a temperature for a worst case power situation with a worst case incoming air temperature and worst case thermal resistance.

16. The method of claim 11 further comprising:

bringing the chip to a predetermined temperature.

17. The method of claim 11 further comprising:

checking the chip for shorts and continuity of connections.

18. The method of claim 11 further comprising:

powering up the chip.

19. The method of claim 18 further comprising:

applying a reset signal to the chip.

20. The method of claim 11 further comprising:

testing the chip over a range of voltages and frequencies;

entering test result data in a database; and

characterizing the chip according to test results.

21. A method for testing a chip, comprising:

measuring power drawn by the chip;

calculating a test frequency said calculating comprising reducing a chip model junction temperature (Ts) by the product of a thermal resistance for the chip model (Tja) and the difference between a measured power drawn by the chip (Pm) and power drawn by a worst case chip for the chip model (Pwt); and

determining performance of the chip at the calculated test frequency.

22. The method of claim 21 wherein the calculating a test frequency comprises:

determines a frequency at which the chip must operate (Fs);

determining a slope of correlation between test data for chips of a model for the chip being tested and operating frequencies for the chip model (M);

determining an offset between test data for the chip model and specified operating frequency correlation (B);

determining a chip model junction temperature (Ts);

determining a junction temperature of the chip (Tt); and,

determining a slope a maximum operating frequency as a function of temperature for the chip model (FTS).

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2011
From: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.; HEWLETT-PACKARD COMPANY
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 026198/0139 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 18, 2003
From: HEWLETT-PACKARD COMPANY
To: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Reel/Frame 013776/0928 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 6, 2003
From: BUTLER, RICHARD M.
To: HEWLETT-PACKARD COMPANY
Reel/Frame 013728/0275 →