Methods and apparatuses for maintaining information stored in a non-volatile memory cell

1. An integrated circuit, comprising:

a non-volatile memory cell having a charge storage component; and

a keep mode circuit including a storage device to receive information stored in the non-volatile memory cell, and a first switch operable to connect to the non-volatile memory cell in order to apply a static bias voltage across the charge storage component to restrict charge-loss to a predetermined level.

2. The integrated circuit of claim 1 , wherein the predetermined level is above a minimal sensing level.

3. The integrated circuit of claim 1 , wherein the storage device generates the static bias voltage to resist charge-loss in the non-volatile memory cell.

4. The integrated circuit of claim 1 , wherein the keep mode circuitry re-charges the charge storage component up to at least the predetermined level upon activating the keep mode circuit after charge levels of the non-volatile memory cell have fallen below the predetermined level.

5. The integrated circuit of claim 1 , wherein the keep mode circuitry is shared among one or more non-volatile memory cells.

6. The integrated circuit of claim 1 , wherein the storage device is a static random access memory or a dynamic random access memory.

7. The integrated circuit of claim 1 , wherein the non-volatile memory cell is a dual polarity non-volatile memory cell.

8. The integrated circuit of claim 7 , wherein restricting the charge loss is to a positive value for a positive polarity of the dual polarity non-volatile memory cell and a negative value for a negative polarity of the dual polarity non-volatile memory cell.

9. The integrated circuit of claim 7 , wherein the predetermined level is above a minimal positive sensing level for a positive polarity of the dual polarity non-volatile memory cell and a minimal negative sensing level for a negative polarity of the dual polarity non-volatile memory cell.

10. An integrated circuit, comprising:

a non-volatile memory cell having a charge storage component;

a sense amplifier connected to an output of the non-volatile memory cell; and,

a keep mode circuit including a storage device connected to the output of the sense amplifier and a first switch operable to connect to the non-volatile memory cell in order to apply a static bias voltage across the charge storage component.

11. The integrated circuit of claim 10 , wherein the non-volatile memory cell is a dual polarity non-volatile memory cell.

12. The integrated circuit of claim 10 , wherein the first switch periodically connects an output of the storage device to the non-volatile memory cell after programming of the non-volatile memory cell is performed.

13. The integrated circuit of claim 10 , wherein the sense amplifier periodically reinforces information stored in the storage device equal to or greater than once per hour.

14. The integrated circuit of claim 10 , wherein the sense amplifier is a differential sense amplifier.

15. A method to prevent loss of charge stored in a non-volatile memory cell over time, comprising:

storing charge in a charge storage component in a dual polarity non-volatile memory cell; and

applying a static bias voltage across the charge storage component at a value that still allows for a valid sensing of a logic state stored by the dual polarity non-volatile memory cell.

16. The method of claim 15 , further comprising:

suspending the application of the static bias voltage across the charge storage component when the non-volatile cell is being programmed.

17. The method of claim 15 , further comprising:

periodically reinforcing information stored in the storage device equal to or greater than once per hour.

18. An apparatus, comprising:

means for storing charge in a charge storage component in a dual polarity non-volatile memory cell; and

means for applying a static bias voltage across the charge storage component at a value that still allows for a valid sensing of a logic state stored by the dual polarity non-volatile memory cell.

19. The apparatus of claim 18 , further comprising:

means for sensing a logic state indicated by charge stored in the charge storage component; and

means for supplying the logic state to the means for applying the static bias voltage.

20. The apparatus of claim 18 , further comprising:

means for suspending the application of the static bias voltage across the charge storage component when the non-volatile cell is being programmed.

21. A machine-readable medium that stores data representing a memory that includes

a circuit comprising:

one or more non-volatile memory (DPNVM) cells including a first non-volatile memory cell having a charge storage component;

a storage device to receive information stored in the first non-volatile memory cell; and

a keep mode circuit connected to the storage device, the circuit including a first switch operable to connect to the non-volatile memory cell in order to apply a bias voltage across the charge storage component to restrict charge-loss to a predetermined level.

22. The machine readable medium of claim 21 , wherein the machine readable medium comprises a memory compiler to provide a layout utilized to generate one or more lithographic masks used in fabrication of the memory.

23. The machine-readable medium of claim 21 , wherein the memory is an embedded memory.

24. The machine-readable medium of claim 21 , wherein the first non-volatile memory cell is a dual-polarity non-volatile memory cell.