Method for forming a semiconductor device
View Patent ↗A metal film containing a metal is formed on a silicon layer, and then a surface portion of the silicon layer and the metal film are oxidized so as to form a silicon oxide film containing the metal in a surface portion of the silicon layer.
1. A method for forming a semiconductor device, comprising the steps of:
cleaning a surface of a substrate;
forming a metal film contacting the cleaned substrate having a surface contaminant; and
heating the metal film including the surface contaminant in an atmosphere including a hydrogen gas and an oxygen gas, so as to form a silicon oxide film including the metal.
2. A method for forming a semiconductor device, comprising the steps of:
cleaning a surface of a substrate;
forming a metal film contacting the cleaned substrate having a surface contaminant; and
forming a silicon oxide film including the metal while oxidizing a portion of the substrate by oxidation species passing through the metal film, so as to take the surface contaminant into the silicon oxide film.
3. A method for forming a semiconductor device, comprising the steps of:
forming a metal film contacting a silicon layer having a surface contaminant;
forming a silicon oxide film including the metal while oxidizing a portion of the silicon layer in an atmosphere including a hydrogen gas and an oxygen gas; and
forming an electrode on the silicon oxide film.
4. The method for forming a semiconductor device of claim 1 , wherein the surface contaminant includes carbon or moisture.
5. The method for forming a semiconductor device of claim 2 , wherein the surface contaminant includes carbon or moisture.
6. The method for forming a semiconductor device of claim 3 , wherein the surface contaminant includes carbon or moisture.
7. The method for forming a semiconductor device of claim 2 , wherein the step of forming the silicon oxide film includes a step of performing a thermal oxidation process on the substrate and the metal film.
8. The method for forming a semiconductor device of claim 1 , wherein the heating step is performed by using infrared rays.
9. The method for forming a semiconductor device of claim 7 , wherein the thermal oxidation process is performed by using infrared rays.
10. The method for forming a semiconductor device of claim 3 , wherein the step of forming a silicon oxide film is performed by using infrared rays.
11. The method for forming a semiconductor device of claim 1 , wherein the surface contaminant is taken into the silicon oxide film at the step of heating.
12. The method for forming a semiconductor device of claim 3 , wherein the surface contaminant is taken into the silicon oxide film at the step of forming the silicon oxide film.
13. The method for forming a semiconductor device of claim 1 , wherein the heating step is performed in a pyrogenic atmosphere.
14. The method for forming a semiconductor device of claim 2 , wherein the step of forming the silicon oxide film is performed in a pyrogenic atmosphere.
15. The method for forming a semiconductor device of claim 1 , wherein the metal includes a group III element or a group IV element.
16. The method for forming a semiconductor device of claim 2 , wherein the metal includes a group III element or a group IV element.
17. The method for forming a semiconductor device of claim 16 , wherein the group III element is a lanthanoid, an actinoid or aluminum, and the group IV element is hafnium or zirconium.
18. The method for forming a semiconductor device of claim 2 , wherein the step of forming the silicon oxide film includes a step of performing a plasma oxidation process on a surface portion of the substrate and the metal film.
19. The method for fanning a semiconductor device of claim 2 , wherein the step of forming the silicon oxide film includes a step of performing an electrolytic oxidation process on a surface portion of the substrate and the metal film.
20. The method for forming a semiconductor device of claim 1 , wherein the step of cleaning the surface of the substrate is performed by a buffered hydrogen fluoride into which a hydrogen peroxide solution is mixed.
21. The method for forming a semiconductor device of claim 1 , wherein the cleaned substrate also has a defect.
22. The method for forming a semiconductor device of claim 1 , wherein the step of forming the metal film is performed by sputtering.
23. The method for forming a semiconductor device of claim 2 , wherein the step of forming the metal film is performed by sputtering.