Priority encoder circuit for content addressable memory (CAM) device
View Patent ↗A priority encoder circuit ( 300 ) for a content addressable memory (CAM) device is disclosed that may include a priority selection circuit ( 310 ) that receives match results (M 0 to Mz) and provides prioritized match results (P 0 to Pz), and a logic section ( 350 ) that logically combines prioritized match results (P 0 to Pz) to generate a smaller number of encoder inputs (RWL 0 to RWLr). A logic section ( 350 ) can also generate a first portion (ID 0 ) of an encoded value (ID 0 to IDX). Encoder entries ( 314 - 0 to 314 - r ) may each generate a second portion (ID 1 to IDX) of an encoded value (ID 0 to IDX).
1. A content addressable memory (CAM) device, comprising;
a second CAM entry between a first CAM entry and a first side of a priority encoder circuit;
a third CAM entry between a fourth CAM entry and a second side of the priority encoder circuit;
the priority encoder circuit having an encoding circuit with a plurality of encoder entries that each generates a unique encoded output value;
each CAM entry has a CAM entry height dimension with respect to a first direction that is essentially parallel to the first side; and
each encoder entry has an encoder entry height dimension with respect to the first direction that is no more than half the CAM entry height dimension.
2. The CAM device of claim 1 , wherein:
each CAM entry is configured to generate a match indication; and
each pair of encoding entries is configured to generate a same portion of an index value corresponding to at least four match indications.
3. The CAM device of claim 1 , wherein:
each CAM entry is configured to generate a match indication; and
the priority encoder circuit is configured to generate a different index value for each match indication.
4. The CAM device of claim 1 , wherein:
the priority encoder circuit further includes
a logic section configured to generate a first portion of each index value, and
the encoding entries are each configured to generate a second portion of an index value corresponding to at least two match indications from different CAM entries.
5. The CAM device of claim 4 , wherein:
the logic section includes a plurality of logic gates that each combines at least two prioritized match indications to generate an encoding input for the encoding circuit.
6. The CAM device of claim 4 , wherein:
the logic section includes a plurality activation devices commonly connected to at least one index signal line, each activation device coupling the at least one index signal line to a predetermined potential when one of at least two prioritized match indications is activated.
7. The CAM device of claim 4 , wherein:
the logic section is disposed between the second CAM entry and the encoding entries.
8. A semiconductor device, comprising:
a priority encoder circuit comprising,
a logic section coupled to receive at least X prioritized input signals, where X is an integer greater than 4, and provide less than X encoder input signals, the logic section generating a first portion of an encoded output value, and
an encoding section that receives the less than X encoder input signal and generates a different second portion of the encoded output value for each different encoder input signal.
9. The semiconductor device of claim 8 , wherein
the first portion of the encoded value has fewer bits than the second portion of the encoded value.
10. The semiconductor device of claim 8 , wherein:
the logic section includes a plurality of activation devices that couple a first portion bit line to a predetermined potential in response to the activation of a subset of the X prioritized input signals, the first portion bit line providing a bit value for the first portion of the encoded value.
11. The semiconductor device of claim 8 , wherein
the logic section includes a plurality of logic gates for logically combining at least two prioritized input signals to generate one of the encoder input signals.
12. The semiconductor device of claim 11 , wherein
each logic gate combines one of the prioritized input signals with an adjacent prioritized input signal.
13. The semiconductor device of claim 11 , wherein
the logic gates include OR-type gates.
14. The semiconductor device of claim 8 , wherein
the encoder section comprises a read-only-memory (ROM) and the encoder input signals are each coupled to different ROM word lines of the ROM.
15. The semiconductor device of claim 8 , further including:
the priority encoder circuit is formed in a semiconductor substrate and includes a first side and second side;
a first group of CAM entries disposed on the first side of the priority encoder;
a second group of CAM entries disposed between the first group of CAM entries and the first side of the priority encoder;
a fourth group of CAM entries disposed on the second side of the priority encoder; and
a third group of CAM entries disposed between the fourth group of CAM entries and the second side of the priority encoder.