IP Library Granted Patent US 6,936,496
Granted Patent B2
US 6,936,496 · App. 10/326,708 · Granted Aug 30, 2005

Nanowire filament

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,936,496
App. No.
10/326,708
Granted
Aug 30, 2005
Kind
B2
Abstract

A method of manufacturing a nanowire filament includes forming and fusing actions. In a forming action, close proximity conductors are formed. In another forming action, a junction oxide is formed between the close proximity conductors. In a fusing action, a nanowire filament is fused between the close proximity conductors, through the junction oxide. A circuit is also provided, having first and second close proximity conductors, and a nanowire filament fused between the close proximity conductors.

Claims (35)

1. A method of manufacturing a nanowire filament, comprising:

forming close proximity conductors:

forming a junction oxide between the close proximity conductor;

fusing a nanowire filament between the close proximity conductors, through the junction oxide; and

removing at least some of the junction oxide from the nanowire filament to expose the nanowire filament.

2. The method according to claim 1 , further comprising functionalizing the exposed nanowire filament.

3. The method according to claim 2 , wherein functionalizing the exposed nanowire filament results in a physically or chemically attached coating that can be reactive or interactive with an analyte.

4. The method according to claim 2 , wherein functionalizing the exposed nanowire filament results in a dielectric layer being added to the nanowire filament.

5. A method of manufacturing a thermocouple, comprising:

forming close proximity conductors;

forming a junction oxide between the close proximity conductors; and

fusing a nanowire filament between the close proximity conductors, through the junction oxide.

wherein:

forming close proximity conductors comprises forming a first conductor of a first metal and forming a second conductor of a second metal; and

fusing a nanowire filament through the junction oxide comprises fusing a bi-metallic nanowire filament through the junction oxide between the close proximity conductors.

6. A method of manufacturing a thermocouple reference junction, comprising:

forming a thermocouple according to claim 5 ; and

coupling a heat source to the thermocouple.

7. A method of manufacturing a nanowire filament comprising:

forming close proximity conductors;

forming a junction oxide between the close proximity conductors; and

fusing a nanowire filament between the close proximity conductors, through the junction oxide,

wherein fusing a nanowire filament between the close proximity conductors, through the junction oxide, comprises:

applying a voltage across the close proximity contacts, the voltage being sufficient to create a tunneling current between the close proximity conductors; and

as a result of the tunneling current, electromigrating material from the close proximity conductors to form the nanowire filament.

8. The method of claim 7 , wherein: while applying a voltage across the close proximity contacts, the resistance of the nanowire filament is determined by a combination of the duration the voltage is applied and the amount of voltage being applied.

9. A sensor having a nanowire filament manufactured by:

forming close proximity conductors;

forming a junction oxide between the close proximity conductors; and

fusing a nanowire filament between the close proximity conductors, through the junction oxide.

10. A method of manufacturing a nanowire filament, comprising:

forming a close proximity conductors;

forming a junction oxide between the close proximity conductors; and

fusing a nanowire filament between the close proximity conductors, through the junction oxide,

wherein forming close proximity conductors comprises an action selected from the group consisting of using lithography and using imprint lithography.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2011
From: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.; HEWLETT-PACKARD COMPANY
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 026198/0139 →