Capacitor and fabrication method thereof
View Patent ↗A fabrication of a capacitor in a semiconductor is simplified by using nitrogen plasma in forming an aluminum nitride layer functioning as an insulation layer on the aluminum layer disposed in a capacitor region. Subsequently, a planarized IMD (inter-metal dielectric) layer is obtained, facilitating via etching process.
1. A method for fabricating a capacitor in a semiconductor device, comprising the steps of:
(a) depositing an Al layer serving as a lower electrode of the capacitor on a substrate;
(b) treating said Al layer with nitrogen to form an aluminum nitride layer at an upper portion of said Al layer, wherein a thickness of the aluminum nitride layer is 1/200 to 1/15 of thickness of said Al layer;
(c) patterning said aluminum nitride layer by removing said aluminum nitride layer disposed on a non-capacitor region; and
(d) depositing an upper electrode of the capacitor on the patterned aluminum nitride layer.
2. A method for fabricating a capacitor according to claim 1 , wherein said Al layer has a thickness of about 3,000–10,000 Å.
3. A method for fabricating a capacitor according to claim 1 , wherein the aluminum nitride layer has a thickness of about 50–200 Å.
4. A method for fabricating a capacitor according to claim 1 , wherein the upper electrode is a TiN layer and the TiN layer has a thickness of about 600–1,000 Å.
5. A method for fabricating a capacitor according to claim 1 , wherein the step (b) is performed by treating the aluminum layer with nitrogen plasma.
6. A method for fabricating a capacitor according to claim 1 , wherein the upper electrode comprises a transition metal selected from the group consisting of tungsten, molybdenum and tantalum.
7. A method for fabricating a capacitor according to claim 1 , wherein the upper electrode comprises a nitride of refractory metal selected from the group consisting of titanium, zirconium, chromium and hafnium.
8. A method for fabricating a capacitor according to claim 1 , wherein the upper electrode is a TiN layer.
9. A method for fabricating a capacitor according to claim 1 , wherein the upper electrode is a Ti/TiN layer.
10. A method for fabricating a capacitor according to claim 1 , wherein the aluminum layer has a thickness of about 3,000–10,000 Å, the aluminum nitride layer has a thickness of about 50–200 Å and the upper electrode is a TiN layer and the TiN layer has a thickness of about 600–1,000 Å.