Method for cleaning a semiconductor device
View Patent ↗In order to clean a semiconductor device having a dielectric layer deposited on a top surface of a lower metal wiring of the semiconductor device, and a contact hole or a via hole formed in the dielectric layer to expose the lower metal line therethrough, the semiconductor device is located within a radio frequency (RF) cleaning chamber. A gas mixture of HCl and H 2 O is introduced into the RF cleaning chamber and Ar gas plasma is generated in the RF cleaning chamber to excite HCl gas so that the HCl gas and an excited HCl gas are used to remove carbon radicals and metal particles.
1. A method for cleaning a semiconductor device, the method comprising the steps of:
(a) forming a dielectric layer on a top surface of a lower metal wiring of the semiconductor device, wherein a contact hole or a via hole to expose the lower metal line therethrough is formed in the dielectric layer through use of a photoresist layer;
(b) locating the semiconductor device within a radio frequency (RF) cleaning chamber;
(c) supplying Ar gas and a gas mixture of HCl and H 2 O into the RF cleaning chamber; and
(d) generating Ar gas plasma in the RF cleaning chamber to facilitate reaction of the HCl gas and H 2 O so that Cl − and H 3 O + are generated, the Cl − being used to remove a polymer including carbon that remains in the contact hole or the via hole.
2. The method of claim 1 , wherein an Ar flow rate of the Ar gas is about 3 to about 30 standard cubic centimeter per mm (sccm) and an HCl flow rate of the HCl gas is about 10 to about 70 sccm.
3. The method of claim 1 , wherein a power range of the RF cleaning chamber is from about 200 to 600 W after the Ar gas plasma is generated.
4. The method of claim 1 , wherein a temperature of the RF cleaning chamber is maintained at a range of about 100° C. to about 300° C.
5. The method of claim 1 , wherein a power range of the RF cleaning chamber is from about 50 W to about 300 W.
6. A method for cleaning a semiconductor device, the method comprising the steps of:
(a) forming a dielectric layer on a top surface of a lower metal wiring of the semiconductor device, with a contact hole or a via hole to expose the lower metal line therethrough being formed in the dielectric layer;
(b) locating the semiconductor device within a radio frequency (RF) cleaning chamber;
(c) supplying Ar gas and a gas mixture of HCl and H 2 O into the RF cleaning chamber; and
(d) generating Ar gas plasma in the RF cleaning chamber to facilitate reaction of the HCl gas and H 2 O for removal of a carbon or metal residue that remains in the contact hole or the via hole.
7. The method of claim 6 , wherein a flow rate of the Ar gas is about 3 to about 30 standard cubic centimeter per min (sccm) and an HCl flow rate of the HCl gas is about 10 to about 70 sccm.
8. The method of claim 6 , wherein a power range of the RF cleaning chamber is from about 200 to 600 W after the Ar gas plasma is generated.
9. The method of claim 6 wherein a power range of the RF cleaning chamber is from about 50 W to about 300 W.
10. The method of claim 6 , wherein a temperature of the RF cleaning chamber is maintained at a range of about 100° C. to about 300° C.