Method for detecting flare noise of semiconductor device
View Patent ↗A method for instantaneously detecting flare noise within patterns of the semiconductor device, which includes the steps of preparing a mask having a plurality of exposed areas having different light energy levels when being photo exposed and providing a plurality of dummy patterns with different sizes for detecting flare noises in each exposed area; forming dummy patterns on a wafer through a photolithography process with the mask; and detecting the flare noise by comparing the dummy patterns in each exposed area with an optical microscope.
1. A method for detecting flare noise in a semiconductor device, comprising the steps of:
preparing a mask having a plurality of light-exposed areas and a plurality of light-blocking patterns with different sizes for detecting flare noises on each of the light-exposed areas;
projecting the plurality of light-blocking patterns on a wafer by performing a photolithography process with the mask;
preparing a first relation between the flare noise and a fitting coefficient according to a size of a light-blocking pattern which is disappeared or about to be disappeared at a specific light energy; and
determining the flare noise according to the fitting coefficient determined by the first relation.
2. The method as recited in claim 1 , wherein light energy of incident light for each of the light-exposed areas varies in accordance with the number of superposed shots, at the step of projecting the plurality of light-blocking patterns onto the wafer.
3. The method as recited in claim 2 , wherein the area with the superposed shots includes a scribe lane.
4. The method as recited in claim 1 , wherein each of the plurality of light-blocking patterns is formed in the shape of a square.
5. The method as recited in claim 1 , wherein the step of preparing the first relation includes the steps of:
preparing a second relation between the light energy, and the fitting coefficient according to the sizes of the light-blocking patterns which have disappeared or are about to disappear at different light energies,
determining the fitting coefficient based on the second relation by finding the size of the light-blocking pattern which is disappeared or about to be disappeared at the specific light energy.