Method of forming copper wire on semiconductor device
View Patent ↗Disclosed is a method of forming a copper wire on a semiconductor device capable of preventing the natural oxidation of copper. The method comprises the steps of: forming an insulation film pattern having vias and trenches on a semiconductor substrate; forming a copper wire by filling up the vias and the trenches with copper; successively forming a capping layer and a protective layer on the copper wire and the insulation film pattern; exposing the copper wire by selectively removing the capping layer and the protective layer; and forming an oxidation-prevention layer on the copper wire. According to the present invention, the natural oxidation of copper is avoided by selectively depositing aluminum on a copper wire pad, and therefore a dependable evaluation is possible from tests of reliability in a high temperature. Furthermore, since aluminum has a lower contact resistance compared with copper, dependable test results are obtained during tests of electrical characteristics.
1. A method of forming a copper wire on a semiconductor device, comprising the steps of:
forming an insulation film pattern having vias and trenches on a semiconductor substrate;
forming a copper wire by filling up the vias and the trenches with copper;
successively forming a capping layer and a protective layer on the copper wire and the insulation film pattern;
exposing the copper wire by selectively removing the capping layer and the protective layer;
forming an aluminum layer as an oxidation-prevention layer on the copper wire; and
removing the natural oxidation layer on the copper wire.
2. The method as claimed in claim 1 ,
wherein during the step of removing the natural oxidation layer, a solution of 5%-10% HF is used.
3. The method as claimed in claim 1 , wherein the aluminum layer is formed by a chemical vapor deposition method using dimethylaluminumhydride as a precursor.
4. The method as claimed in claim 3 , wherein the aluminum layer is deposited it a temperature of 230° C. to 350° C. and formed to a thickness of 5,000 Å to 10,000 Å.
5. The method as claimed in claim 1 , further comprising the step of:
performing a heat treatment for stabilizing the structure of the oxidation-prevention layer, after the step of forming the oxidation-prevention layer.
6. The method as claimed in claim 5 , wherein the heat treatment is performed for 10 to 30 minutes at a temperature of 200° C. to 400° C.