Three dimensional multimode and optical coupling devices
View Patent ↗Three dimensional electronic and optical coupling devices that are capable of providing high speed coupling over a large frequency range while limiting the amount of space consumption in the communications network. An optical or electrical coupling device comprises a first substrate and a second substrate adjacent to the first substrate having one or more optical waveguides or microstrips formed thereon. The substrates will have disposed thereon conductive microstrips and/or dielectric elements. The one or more optical waveguides or microstrips formed on the first substrate correspond to at least one optical waveguides or microstrips formed on the second substrate so as to facilitate optical coupling between the corresponding waveguides. Precise spacing between the substrates and precise spacing between the optical waveguides or microstrips facilitate the requisite optical/RF coupling.
1. An RF electrical coupling device, comprising:
first and second substrates;
a substrate connection means that serves to structurally connect the first substrate to the second substrate; and
first and second electrically conductive microstrips and a first dielectric element disposed upon the first and second substrates such that each substrate carries at least one element selected from the group consisting of the first and second electrically conductive microstrips and the first dielectric element,
wherein
the substrate connection means includes at least one solder bump that spaces the first substrate from the second substrate, and
the first and second electrically conductive microstrips interact to facilitate the transfer of energy between the microstrips and the first dielectric element alters frequency characteristics of the transfer of energy.
2. The RF electrical coupling device of claim 1 , wherein the substrate connection means further comprises a plurality of solder bumps that space the first substrate from the second substrate.
3. The RF electrical coupling device of claim 2 , wherein the plurality of solder bumps define a predetermined separation distance between the first and second substrates, and wherein the plurality of solder bumps have substantially the same height so as to facilitate a generally parallel relationship between the first and second substrates.
4. The RF electrical coupling device of claim 2 , wherein the plurality of solder bumps define a predetermined separation distance between the first and second substrates, and wherein the plurality of solder bumps vary in height so as to facilitate a generally graded relationship between the first and second substrates.
5. The RF electrical coupling device of claim 2 , wherein the plurality of solder bumps define a predetermined separation distance between the first substrate and the second substrate of about 50 micrometers to about 500 micro meters.
6. The RF electrical coupling device of claim 1 , wherein the substrate connection means further comprises a bonding means that structurally bonds the first substrate to the second substrate.
7. The RF electrical coupling device of claim 1 , wherein the first electrically conductive microstrip is disposed on the first substrate, the first dielectric element is disposed on the first substrate and the second electrically conductive microstrip is disposed on the second substrate.
8. The RF electrical coupling device of claim 7 wherein the first and second substrates are positioned such that the first electrically conductive microstrip is generally aligned with the second electrically conductive microstrip.
9. The RF electrical coupling device of claim 8 , wherein the first electrically conductive microstrip is generally vertically aligned in a mirror-like relationship with the second electrically conductive microstrip.
10. The RF electrical coupling device of claim 8 , wherein the first electrically conductive microstrip is generally vertically aligned in an off-centered relationship with the second electrically conductive microstrip.
11. The RF electrical coupling device of claim 8 , further comprising a second dielectric element disposed on the second substrate that serves to alter frequency characteristics of the transfer of energy.
12. The RF electrical coupling device of claim 1 , wherein the device is implemented in high speed modulators operating in the about 1 gigahertz to about 40 gigahertz range.
13. The RF electrical coupling device of claim 1 , wherein the first and second substrates comprise the same material.
14. The RF electrical coupling devices of claim 13 , wherein the material is chosen from the group consisting of silicon, germanium, indium phosphate, gallium arsenide, alumina, polytetrafluoroethylene (PTFE), lithium niobate and ceramic.
15. The RF electrical coupling device of claim 1 , wherein the first and second substrates comprise dissimilar materials.
16. The RF electrical coupling device of claim 15 wherein the material of the first substrate is chosen from the group consisting of silicon, germanium, indium phosphate, gallium arsenide, alumina, polytetrafluoroethylene (PTFE), lithium niobate and ceramic and the material of the second substrate is chosen from the group consisting of silicon, germanium, indium phosphate, gallium arsenide, alumina, polytetrafluoroethylene (PTFE), lithium niobate and ceramic.
17. The RF electrical coupling device of claim 2 , wherein at least one of the plurality of solder bumps provide for electrical connectivity between the first and second substrates.
18. An RF electrical coupling device comprising:
a first substrate having a first electrically conductive microstrip and a first dielectric element disposed thereon;
a second substrate adjacent to the first substrate having a second electrically conductive microstrip disposed thereon; and
a substrate connection means that serves to structurally connect the first substrate to the second substrate;
wherein
the substrate connection means includes at least one solder bump that spaces the first substrate from the second substrate, and
the first and second electrically conductive microstrips interact to facilitate the transfer of energy between the microstrips and the first dielectric element alters frequency characteristics of the transfer of energy.
19. The RF electrical coupling device of claim 18 , wherein the substrate connection means further comprises a plurality of solder bumps that space the first substrate from the second substrate.
20. The RF electrical coupling device of claim 19 , wherein the plurality of solder bumps define a predetermined separation distance between the first and second substrates, and wherein the plurality of solder bumps have substantially the same height so as to facilitate a generally parallel relationship between the first and second substrates.
21. The RF electrical coupling device of claim 19 , wherein the plurality of solder bumps define a predetermined separation distance between the first and second substrates, and wherein the plurality of solder bumps vary in height so as to facilitate a generally graded relationship between the first and second substrates.
22. The RF electrical coupling device of claim 19 , wherein the plurality of solder bumps define a predetermined separation distance between the first substrate and the second substrate of about 50 micrometers to about 500 micrometers.
23. The RF electrical coupling device of claim 18 , wherein the substrate connection means further comprises substrate bonding means that bonds the first substrate to the second substrate.
24. The RF electrical coupling device of claim 18 , wherein the first and second substrates are positioned such that the first electrically conductive microstrip is generally aligned with the second electrically conductive microstrip.
25. The RF electrical coupling device of claim 24 , wherein the first electrically conductive microstrip is generally vertically aligned in a mirror-like relationship with the second electrically conductive microstrip.
26. The RF electrical coupling device of claim 24 , wherein the first electrically conductive microstrip is generally vertically aligned in an off-centered relationship with the second electrically conductive microstrip.
27. The RF electrical coupling device of claim 18 , further comprising a second dielectric element disposed on the second substrate that serves to alter frequency characteristics of the transfer of energy.
28. An RF electrical coupling device, comprising:
a first substrate having a first and second electrically conductive microstrips disposed thereon;
a second substrate adjacent to the first substrate having a first dielectric element disposed thereon; and
a substrate connection means that serves to structurally connect the first substrate to the second substrate,
wherein
the substrate connection means includes at least one solder bump that spaces the first substrate from the second substrate, and
the first and second electrically conductive microstrips interact to facilitate the transfer of energy between the microstrips and the first dielectric element alters frequency characteristics of the transfer of energy.
29. The RF electrical coupling device of claim 28 , wherein the substrate connection means further comprises a plurality of solder bumps that space the first substrate from the second substrate.
30. The RF electrical coupling device of claim 29 , wherein the plurality of solder bumps define a predetermined separation distance between the first and second substrates, and wherein the plurality of solder bumps have substantially the same height so as to facilitate a generally parallel relationship between the first and second substrates.
31. The RF electrical coupling device of claim 29 , wherein the plurality of solder bumps define a predetermined separation distance between the first and second substrates, and wherein the plurality of solder bumps vary in height so as to facilitate a generally graded relationship between the first and second substrates.
32. The RF electrical coupling device of claim 29 , wherein the plurality of solder bumps define a predetermined separation distance between the first substrate and the second substrate of about 50 micrometers to about 500 micrometers.
33. The RF electrical coupling device of claim 28 , wherein the substrate connection means further comprises substrate bonding means that bond the first substrate to the second substrate.
34. The RF electrical coupling device of claim 28 , wherein the first and second substrates are positioned such that the first electrically conductive microstrip is generally aligned with the second electrically conductive microstrip.
35. The RF electrical coupling device of claim 34 , wherein the first electrically conductive microstrip is generally vertically aligned in a mirror-like relationship with the second electrically conductive microstrip.
36. The RF electrical coupling device of claim 34 , wherein the first electrically conductive microstrip is generally vertically aligned in an off-centered relationship with the second electrically conductive microstrip.
37. The RF electrical coupling device of claim 28 , further comprising a second dielectric element disposed on the first substrate that serves to alter frequency characteristics of the transfer of energy.
38. An RF electrical coupling device, comprising:
a first substrate having a first and second electrically conductive microstrips disposed thereon;
a second substrate adjacent to the first substrate having a third and fourth electrically conductive microstrip disposed thereon; and
a substrate connection means that serves to structurally connect the first substrate to the second substrate,
wherein
the substrate connection means includes at least one solder bump that spaces the first substrate from the second substrate, and
the first, second, third and fourth electrically conductive microstrips interact to facilitate the transfer of energy between the microstrips.
39. The RF electrical coupling device of claim 38 , wherein the substrate connection means further comprises a plurality of solder bumps that space the first substrate from the second substrate.
40. The RF electrical coupling device of claim 39 , wherein the first and third electrically conductive microstrips are connected by a direct current path through one of the plurality of solder bumps.
41. The RF electrical coupling device of claim 38 , wherein the second and fourth electrically conductive microstrips are connected by alternating current coupling.
42. The RF electrical coupling device of claim 38 , wherein the first and second substrates are formed of barium titanate.
43. The RF electrical coupling device of claim 38 , wherein the first substrate is formed of barium titanate and the second substrate is formed of silicon.
44. The RF electrical coupling device of claim 38 , wherein the first substrate is formed of barium titanate and the second substrate is formed of gallium arsenide.
45. The RF electrical coupling device of claim 38 , wherein the first and second electrically conductive microstrips are disposed on a first surface of the first substrate and the third and fourth electrically conductive microstrips are disposed on a first surface of the second substrate that faces the first surface of the first substrate.
46. The RF electrical coupling device of claim 38 , wherein the first and second electrically conductive microstrips are disposed on a first surface of the first substrate, the third electrically conductive microstrip is disposed on a first surface of the second substrate that faces the first surface of the first substrate and the fourth electrically conductive microstrip is disposed on a second surface of the second substrate.