Semiconductor body forming a solar cell with a bypass diode
View Patent ↗The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
1. A solar cell comprising:
an integral semiconductor body having a sequence of layers of semiconductor material, including a first region in which the sequence of layers of semiconductor material forms at least one cell of a multijunction solar cell, and a second region in which the sequence of layers forms a bypass diode to pass current when the solar cell is shaded, and
a metal layer deposited over said body that interconnects a contact of said multijunction solar cell to a contact of said bypass diode;
wherein the sequence of layers in the first region and the sequence of layers in the second region are identical, with each layer in the first region having the same composition and thickness as the corresponding layer in the second region.
2. A solar cell as defined in claim 1 , wherein the sequence of layers that forms a bypass diode is grown over a sequence of layers that forms at least a portion of one cell of said multijunction solar cell in said first region.
3. A solar cell as defined in claim 1 , wherein said metal layer connects a region of a first polarity of said solar cell with a region of a second polarity of said bypass diode.
4. A solar cell as defined in claim 1 , wherein the semiconductor body includes a germanium substrate.
5. A solar cell as defined in claim 4 , wherein the germanium substrate includes a photoactive junction.
6. A solar cell as defined in claim 1 , wherein said sequence of layers that forms one cell of said multijunction solar cell includes a GaAs layer.
7. A solar cell as defined in claim 1 , wherein the bypass diode is electrically connected across all of the cells in the multijunction solar cell.
8. A solar cell as defined in claim 1 , wherein the metal layer extends between said contact of said bypass diode to a trough that extends through at least some of said sequence of layers.
9. A solar cell as defined in claim 1 , wherein the multijunction solar cell includes a GaInP 2 top cell.
10. A solar cell as defined in claim 1 , wherein the semiconductor body includes a three junction solar cell.
11. A solar cell as defined in claim 1 , wherein said bypass diode is formed by two layers of said sequence of layers.
12. A solar cell as defined in claim 11 , wherein said two layers forms a subcell of said multijunction solar cell.
13. A solar cell as defined in claim 1 , further comprising an insulator layer deposited over said sequence of layers.
14. A solar cell as defined in claim 13 , further comprising a metal layer deposited over said insulator layer for interconnecting at least one of said layers of said multijunction solar cell with said bypass diode.
15. A solar cell comprising:
an integral semiconductor body having a sequence of layers of semiconductor material, including a first region in which the sequence of layers of semiconductor material forms at least one cell of a multijunction solar cell having a contact of first polarity and a contact of a second polarity; and
a second region spaced apart from said first region in which the sequence of layers in said second regionforms a bypass diode having a contact of a first polarity and a contact of second polarity, said diode functioning to pass current when the solar cell is shaded, wherein the contact of first polarity of said solar cell is connected to said contact of second polarity of said bypass diode,
wherein the sequence of layers in the first region and the sequence of layers in the second region are identical, with each layer in the first region having the same composition and thickness as the corresponding layer in the second region.
16. A solar cell as defined in claim 15 , wherein the sequence of layers that forms a bypass diode is grown over a sequence of layers that forms at least a portion of one cell of said multijunction solar cell in said first region.
17. A solar cell as defined in claim 15 , further comprising a metal layer deposited over said body that interconnects a contact of said multijunction solar cell to a contact of said bypass diode.
18. A solar cell as defined in claim 17 , wherein said metal layer connects a region of a first polarity of said solar cell with a region of a second polarity of said bypass diode.
19. A solar cell as defined in claim 15 , wherein the semiconductor body includes a germanium substrate.
20. A solar cell as defined in claim 19 , wherein the germanium substrate includes a photoactive junction.
21. A solar cell as defined in claim 15 , wherein said sequence of layers that forms one cell of said multijunction solar cell includes a GaAs layer.
22. A solar cell as defined in claim 15 , wherein the bypass diode is electrically connected across all of the cells in the multijunction solar cell.
23. A solar cell as defined in claim 15 , wherein the metal layer extends between said contact of said bypass diode to a trough that extends through at least some of said sequence of layers.
24. A solar cell as defined in claim 15 , wherein the multijunction solar cell includes a GaInP 2 top cell.
25. A solar cell as defined in claim 15 , wherein the semiconductor body includes a three junction solar cell.
26. A solar cell as defined in claim 15 , wherein said bypass diode is formed by two layers of said sequence of layers.
27. A solar cell as defined in claim 26 , wherein said two layers form a subcell of said multijunction solar cell.
28. A solar cell as defined in claim 15 , further comprising an insulator layer deposited over said sequence of layers.
29. A solar cell as defined in claim 28 , further comprising a metal layer deposited over said insulator layer for interconnecting at least one of said layers of said multijunction solar cell with said bypass diode.
30. A solar cell comprising:
an integral semiconductor body having a sequence of layers of semiconductor material, including a first region in which the sequence of layers of semiconductor material forms at least one cell of a multijunction solar cell; and
a second region spaced apart from said first region in which the sequence of layers forms a bypass diode connected so that when the solar cell is forward biased, the bypass diode is reverse biased, and when the solar cell is reverse biased, the bypass diode is forward biased, wherein
wherein the sequence of layers in the first region and the sequence of layers in the second region are identical, with each layer in the first region having the same composition and thickness as the corresponding layer in the second region.
31. A solar cell as defined in claim 30 , wherein the sequence of layers that forms a bypass diode is grown over a sequence of layers that forms at least a portion of one cell of said multijunction solar cell in said first region.
32. A solar cell as defined in claim 30 , further comprising a metal layer deposited over said body that interconnects a contact of said multij unction solar cell to a contact of said bypass diode.
33. A solar cell as defined in claim 32 , wherein said metal layer connects a region of a first polarity of said solar cell with a region of a second polarity of said bypass diode.
34. A solar cell as defined in claim 30 , wherein the semiconductor body includes a germanium substrate.
35. A solar cell as defined in claim 34 , wherein the germanium substrate includes a photoactive junction.
36. A solar cell as defined in claim 30 , wherein said sequence of layers that forms one cell of said multijunction solar cell includes a GaAs layer.
37. A solar cell as defined in claim 30 , wherein the bypass diode is electrically connected across all of the cells in the multijunction solar cell.
38. A solar cell as defined in claim 32 , wherein the metal layer extends between said contact of said bypass diode to a trough that extends through at least some of said sequence of layers.
39. A solar cell as defined in claim 30 , wherein the multijunction solar cell includes a GaInP 2 top cell.
40. A solar cell as defined in claim 30 , wherein the semiconductor body includes a three junction solar cell.
41. A solar cell as defined in claim 30 , wherein said bypass diode is formed by two layers of said sequence of layers.
42. A solar cell as defined in claim 41 , wherein said two layers forms a subcell of said multijunction solar cell.
43. A solar cell as defined in claim 30 , further comprising an insulator layer deposited over said sequence of layers.
44. A solar cell as defined in claim 43 , further comprising a metal layer deposited over said insulator layer for interconnecting at least one of said layers of said multijunction solar cell with said bypass diode.