Patent Assignment
Reel/Frame 021817/0929
Assignment of Assignor's Interest
Recorded: 2008-11-12
Received: 2008-11-12
Pages: 7
Assignor
EMCORE CORPORATION
Executed: 2008-11-06
Assignee
EMCORE SOLAR POWER, INC.
10420 RESEARCH ROAD, SE, ALBUQUERQUE, NM, 87123, UNITED STATES
Covered Properties
(55)
Solar Cell Receiver for Concentrated Photovoltaic System for Iii-V Semiconductor Solar Cell
Application:
12/264,369 →
Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell
Application:
12/253,051 →
Dual Junction InGaP/GaAs Solar Cell
Application:
12/248,654 →
Solar Cell Receiver with a Glass Lid
Application:
12/246,295 →
Method for Assembling a Terrestrial Solar Array Including a Rigid Support Frame
Application:
12/200,168 →
Demounting of Inverted Metamorphic Multijunction Solar Cells
Application:
12/190,449 →
Exponentially Doped Layers in Inverted Metamorphic Multijunction Solar Cells
Application:
12/187,454 →
Wafer Level Interconnection of Inverted Metamorphic Multijunction Solar Cells
Application:
12/187,477 →
Methods of Forming a Lens Sheet for a Photovoltaic Solar Cell System
Application:
12/177,031 →
High band gap contact layer in inverted metamorphic multijunction solar cells
Application:
12/218,558 →
Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
Application:
12/218,582 →
Terrestrial Solar Array Including a Rigid Support Frame
Application:
12/131,556 →
Wide Band Gap Window Layers In Inverted Metamorphic Multijunction Solar Cells
Application:
12/123,864 →
High concentration terrestrial solar array with III-V compound semiconductor cell
Application:
12/148,553 →
Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells
Application:
12/102,550 →
Off-Cut Substrates In Inverted Metamorphic Multijunction Solar Cells
Application:
12/047,944 →
Surfactant Assisted Growth in Graded Layers of Inverted Metamorphic Multijunction Solar Cells
Application:
12/047,842 →
Multijunction Solar Cell with Two Step Diffusion Region in Substrate
Application:
12/041,490 →
Solar Cell Receiver for Concentrated Photovoltaic System for Iii-V Semiconductor Solar Cell
Application:
12/069,642 →
Display Device
Application:
12/012,949 →
Optimization of Ground Coverage of Terrestrial Solar Array System
Application:
12/024,489 →
Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells
Application:
12/023,772 →
III-V Compound Semiconductor Solar Cell for Terrestrial Solar Array
Application:
12/020,283 →
Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells
Application:
11/956,069 →
Thin Inverted Metamorphic Multijunction Solar Cells with Rigid Support
Application:
11/860,142 →
Inverted Metamorphic Multijunction Solar Cells Including Thereading Dislocation Inhibition Layers
Application:
11/860,183 →
Solar Cell Receiver Having an Insulated Bypass Diode
Application:
11/849,033 →
Thin Multijunction Solar Cells With Plated Metal Ohmic Contact and Support
Application:
11/836,402 →
Solar Cell Receiver for Concentrator Modules
Application:
11/830,576 →
Solar Cell with Diamond Like Carbon Cover Glass
Application:
11/741,387 →
Multijunction Solar Cell with Strain-Balanced Quantum Well Middle Cell
Application:
11/788,315 →
Inverted metamorphic solar cell with via for backside contacts
Application:
11/701,741 →
Inverted Metamorphic Solar Cell Mounted on Flexible Film
Application:
11/616,596 →
Method of Fabricating an inverted Metamorphic Solar Cell with Bypass Diode
Application:
11/614,332 →
Solar Cell Structure with Localized Doping in Cap Layer
Application:
11/550,881 →
Terrestrial solar power system using III-V semiconductor solar cells
Application:
11/500,053 →
Inverted Metamorphic Multijunction Solar Cells
Application:
11/445,793 →
Method of Forming a Multijunction Solar Cell Structure with a Gaas/Algaas Tunnel Diode
Application:
11/401,720 →
Via Structures in Solar Cells with Bypass Diode
Application:
11/280,379 →
Reliable Interconnection of Solar Cells Including Integral Bypass Diode
Application:
11/247,828 →
Controlling Dopant Diffusion in a Semiconductor Region
Application:
11/143,516 →
Method of Fabricating a Multijunction Solar Cell with a Bypass Diode Having an Intrinsic Layer
Application:
11/058,595 →
Method and Apparatus of Multiplejunction Solar Cell Structure with High Band Gap Heterojunction Middle Cell
Application:
11/114,454 →
Multijunction solar cell with feedthrough via and two terminals on the same side
Application:
11/109,016 →
Solar Cell Having an Integral Monolithically Grown Bypass Diode
Application:
11/100,066 →
Multijunction Solar Cell with a Bypass Diode Having an Intrinsic Layer
Application:
10/773,343 →
Multijunction Solar Cell with a Bypass Diode
Application:
10/723,456 →
Semiconductor Body Forming a Solar Cell with a Bypass Diode
Application:
10/336,247 →
Method and Apparatus of Multiplejunction Solar Cell Structure with High Band Gap Heterojunction Middle Cell
Application:
10/285,780 →
Apparatus and Method for Integral Bypass Diode in Solar Cells
Application:
10/280,593 →
Apparatus and Method for Optimizing the Efficiency of a Bypass Diode in Multijunction Solar Cells
Application:
09/999,598 →
Solar Cell Having a Front-Mounted Bypass Diode
Application:
09/953,838 →
Solar Cell Having an Integral Monolithically Grown Bypass Diode
Application:
09/934,221 →
Apparatus and Method for Optimizing the Efficiency of Germanium Junctions in Multi-Junction Solar Cells
Application:
09/885,319 →
Solar cell having an integral monolithically grown bypass diode
Application:
09/753,492 →