Method of forming a multijunction solar cell structure with a GaAs/AIGaAs tunnel diode
View Patent ↗A method of forming a multijunction solar cell includes providing a substrate, forming a first subcell by depositing a nucleation layer over the substrate and a buffer layer including gallium arsenide (GaAs) over the nucleation layer, forming a middle second subcell having a heterojunction base and emitter disposed over the first subcell and forming first and second tunnel junction layers between the first and second subcells. The first tunnel junction layer includes GaAs over the first subcell and the second tunnel junction layer includes aluminum gallium arsenide (AlGaAs) over the first tunnel junction layer. The method further includes forming a third subcell having a homojunction base and emitter disposed over the middle subcell.
1. A method of forming a multijunction solar cell comprising:
providing a substrate;
forming a first subcell by depositing a nucleation layer over the substrate and a buffer layer including gallium arsenide (GaAs) over the nucleation layer;
forming a middle second subcell having a heterojunction base and emitter disposed over the first subcell;
forming first and second tunnel unction layers between the first and second subcells, the first tunnel unction layer comprising gallium arsenide (GaAs) over the first subcell and the second tunnel unction layer comprising aluminum gallium arsenide (AlGaAs) over the first tunnel unction layer; and
forming a third subcell having a homojunction base and emitter disposed over the middle subcell.
2. The method of claim 1 , further comprising forming a second tunnel junction layer disposed between the second and the third subcells including an indium gallium phosphide (InGaP) tunnel junction layer formed over the second subcell and an aluminum gallium arsenide (AlGaAs) tunnel junction layer formed over the InGaP tunnel junction layer.
3. The method of claim 1 , wherein the solar cell is a triple-junction cell, and the first subcell is a bottom cell.
4. The method of claim 1 , wherein the second subcell includes a base layer including indium gallium arsenide (InGaAs) and an emitter layer including indium gallium phosphide (InGaP).
5. The method of claim 1 , wherein the third subcell includes a base layer including indium gallium phosphide (InGaP) and an emitter layer including indium gallium phosphide (InGaP).