Method for adjusting a micro-mechanical device
View Patent ↗A method for making a MEMS device comprises forming a plurality of micromechanical elements on a first substrate; forming circuitry and electrodes on a second substrate, the first and second substrates extending in a plane in X and Y directions; aligning the first and second substrates in the X and Y directions and moving the substrates toward each other in a Z direction and bonding the first and second substrates with a gap therebetween in the Z direction to form an assembly; singulating the assembly into assembly portions; and altering the gap for each assembly portion. Another embodiment involves aligning the first and second substrates in the X and Y directions and moving the substrates toward each other in a Z direction and bonding the first and second substrates with a gap therebetween in the Z direction to form an assembly; actuating and testing the micromechanical elements of the assembly; and altering the gap for each assembly. A further embodiment involves aligning the first and second substrates in the X and Y directions and moving the substrates toward each other in a Z direction and bonding the first and second substrates with a gap therebetween in the Z direction to form an assembly; wherein the micromechanical elements are actuated while bonding of the substrates.
1. A method for making a MEMS device, comprising:
forming a plurality of micromechanical elements on a first substrate;
forming circuitry and electrodes on a second substrate, the first and second substrates extending in a plane in X and Y directions;
aligning the first and second substrates in the X and Y directions and moving the substrates toward each other in a Z direction and bonding the first and second substrates with a gap therebetween in the Z direction to form an assembly;
singulating the assembly into assembly portions;
altering the gap for each assembly portion.
2. The method of claim 1 , wherein the bonding of the first and second substrates is by metal compression bonding.
3. The method of claim 2 , wherein the altering of the gap for each assembly portion is by metal compression bonding.
4. The method of claim 1 , wherein the first and second substrates are wafers.
5. The method of claim 4 , wherein the first substrate is a wafer transmissive to visible light.
6. The method of claim 5 , wherein the first substrate is a glass or quartz wafer.
7. The method of claim 6 , wherein the second substrate is a semiconductor wafer.
8. The method of claim 7 , wherein the second substrate is a silicon wafer.
9. The method of claim 1 , wherein the micromechanical elements are micromirrors.
10. The method of claim 1 , wherein the assembly is singulated by scoring and/or sawing.
11. The method of claim 1 , wherein the plurality of micromechanical elements are formed by depositing and patterning a sacrificial material on the first substrate, depositing and patterning one or more structural layers on the sacrificial material, and removing the sacrificial material to release the micromechanical elements.
12. The method of claim 1 , wherein the bonding of the first and second substrates with a gap therebetween is performed by bonding while optically monitoring the gap.
13. The method of claim 12 , wherein the altering of the gap for each assembly portion is performed while monitoring the actuation of the micromechanical elements.
14. The method of claim 12 , wherein the altering of the gap for each assembly portion is performed while monitoring the gap between the first and second substrates.
15. The method of claim 14 , wherein the monitoring of the gap between the first and second substrates is performed optically.
16. The method of claim 12 , wherein the bonding while optically monitoring the gap is metal compression bonding.
17. The method of claim 16 , wherein the altering of the gap of each assembly portion is by further metal compression bonding.
18. The method of claim 1 , wherein the bonding of the first and second substrates is performed to within 1 micron accuracy.
19. The method of claim 1 , wherein the first and second substrates comprise a plurality of die areas, each die area having a plurality of bond areas proximate thereto.
20. The method of claim 19 , wherein the bond areas proximate to each die area comprise one or more metal pillars for metal compression bonding.
21. A method for making a MEMS device, comprising:
forming a plurality of micromechanical elements on a first substrate;
forming circuitry and electrodes on a second substrate, the first and second substrates extending in a plane in X and Y directions;
aligning the first and second substrates in the X and Y directions and moving the substrates toward each other in a Z direction and bonding the first and second substrates with a gap therebetween in the Z direction to form an assembly;
actuating and testing the micromechanical elements of the assembly; and
altering the gap for each assembly.
22. The method of claim 21 , wherein the bonding of the first and second substrates is by metal compression bonding.
23. The method of claim 22 , wherein the altering of the gap for each assembly is by application of pressure in one or more areas comprising metal compression bonds.
24. The method of claim 21 , wherein the first and second substrates are die portions of wafers.
25. The method of claim 24 , wherein the first substrate is a die portion transmissive to visible light.
26. The method of claim 25 , wherein the first substrate is a glass or quartz die portion.
27. The method of claim 26 , wherein the second substrate is a semiconductor die portion.
28. The method of claim 27 , wherein the second substrate is a silicon die portion.
29. The method of claim 21 , wherein the micromechanical elements are micromirrors.
30. The method of claim 21 , wherein the assembly is substantially rectangular.
31. The method of claim 21 , wherein the plurality of micromechanical elements are formed by depositing and patterning a sacrificial material on the first substrate, depositing and patterning one or more structural layers on the sacrificial material, and removing the sacrificial material to release the micromechanical elements.
32. The method of claim 21 , wherein the bonding of the first and second substrates with a gap therebetween is performed by bonding while optically monitoring the gap.
33. The method of claim 32 , wherein the altering of the gap for each assembly is performed while monitoring the actuation of the micromechanical elements.
34. The method of claim 32 , wherein the altering of the gap for each assembly is performed while monitoring the gap between the first and second substrates.
35. The method of claim 34 , wherein the monitoring of the gap between the first and second substrates is performed optically.
36. The method of claim 32 , wherein the bonding while optically monitoring the gap is metal compression bonding.
37. The method of claim 36 , wherein the altering of the gap of each assembly is by further metal compression bonding.
38. The method of claim 21 , wherein the bonding of the first and second substrates is performed to within 1 micron accuracy.
39. The method of claim 21 , wherein the bonding of the first and second substrates is performed while actuating the micromechanical elements.
40. The method of claim 39 , wherein the uniformity of the actuation of the micromechanical elements is measured while during actuation of the micromechanical elements.
41. A method for making a MEMS device, comprising:
forming a plurality of micromechanical elements on a first substrate;
forming circuitry and electrodes on a second substrate, the first and second substrates extending in a plane in X and Y directions;
aligning the first and second substrates in the X and Y directions and moving the substrates toward each other in a Z direction and bonding the first and second substrates with a gap therebetween in the Z direction to form an assembly;
wherein the micromechanical elements are actuated while bonding of the substrates.
42. The method of claim 41 , wherein the bonding of the first and second substrates is by metal compression bonding.
43. The method of claim 42 , wherein the actuation of the micromechanical elements is monitored.
44. The method of claim 41 , wherein the first and second substrates are die portions of wafers.
45. The method of claim 44 , wherein the first substrate is a die portion transmissive to visible light.
46. The method of claim 45 , wherein the first substrate is a glass or quartz die portion.
47. The method of claim 46 , wherein the second substrate is a semiconductor die portion.
48. The method of claim 47 , wherein the second substrate is a silicon die portion.
49. The method of claim 41 , wherein the micromechanical elements are micromirrors.
50. The method of claim 41 , wherein the assembly is substantially rectangular.
51. The method of claim 41 , wherein the plurality of micromechanical elements are formed by depositing and patterning a sacrificial material on the first substrate, depositing and patterning one or more structural layers on the sacrificial material, and removing the sacrificial material to release the micromechanical elements.
52. The method of claim 41 , wherein the bonding of the first and second substrates with a gap therebetween is performed by metal compression bonding, and the actuation of the micromechanical elements is electrostatic actuation, and wherein the actuation of the micromechanical elements is monitored in real time so as to alter the bonding based on detected nonuniformities in actuation of the micromechanical elements.
53. The method of claim 52 , wherein the altering of the gap for each assembly is performed while monitoring the actuation voltages of the micromechanical elements across the assembly or across a portion of the assembly.
54. The method of claim 52 , wherein the altering of the gap for each assembly is performed while monitoring the gap between the first and second substrates and while monitoring the actuation of the micromechanical elements.
55. The method of claim 54 , wherein the monitoring of the gap between the first and second substrates is performed optically.
56. The method of claim 52 , wherein the first and second substrates are bonded non-parallel to each other in order to compensate for nonuniform actuation voltages across the assembly.
57. The method of claim 41 , wherein bonding is automatically altered in response to detected actuation parameters across the assembly.
58. The method of claim 41 , wherein the bonding of the first and second substrates is performed to within 1 micron accuracy.
59. The method of claim 41 , wherein the bonding of the first and second substrates is performed while electrostatically actuating the micromechanical elements by application of voltages to electrodes on the second substrate.
60. The method of claim 59 , wherein the uniformity of the actuation of the micromechanical elements is measured during actuation of the micromechanical elements.
61. A method for making a MEMS device, comprising:
forming a plurality of micromechanical elements on a first substrate;
forming circuitry and electrodes on a second substrate, the first and second substrates extending in a plane in X and Y directions;
aligning the first and second substrates in the X and Y directions and moving the substrates toward each other in a Z direction and bonding the first and second substrates with a gap therebetween in the Z direction to form an assembly;
discontinuing bonding and measuring the gap across the assembly; and
altering the gap for each assembly.