Method for measuring temperature, annealing method and method for fabricating semiconductor device
View Patent ↗When the emissivity ε on the reverse face of a substrate 10 is measured during annealing processing for the substrate 10, films made from a material that varies the emissivity ε, such as a first DPS film 15 used for forming a plug 15 A, a second DPS film 17 used for forming a capacitor lower electrode 17 A and a third DPS film 20 used for forming a capacitor upper electrode 20 A, are formed on the top face of the substrate 10. On the other hand, no film made from a material that varies the emissivity ε, such as a DPS film, is formed on the reverse face of the substrate 10.
1. A method for measuring a temperature comprising the steps of:
forming a doped polysilicon film on a top face and a reverse face of a substrate:
removing a portion of said doped polysilicon film having been formed on said reverse face of said substrate;
measuring emissivity ε on said reverse face of said substrate in a state where no doped polysilicon film is formed on said reverse face of said substrate while annealing said substrate; and
calculating a temperature of said substrate being annealed on the basis of said measured emissivity ε.
2. The method for measuring a temperature of claim 1 ,
wherein the step of measuring emissivity ε includes a step of measuring reflectance r on said reverse face of said substrate for measuring said emissivity ε by using said measured reflectance r.
3. An annealing method for performing annealing on a substrate by using an annealing system including a substrate placing section, a heating section for annealing said substrate placed on said substrate placing section and a measuring section for measuring emissivity ε of said substrate placed on said substrate placing section, comprising the steps of:
forming a doped polysilicon film on a top face and a reverse face of said substrate;
removing a portion of said doped polysilicon film having been formed on said reverse face of said substrate;
measuring said emissivity ε on said reverse face of said substrate in a state where no doped polysilicon film is formed on said reverse face of said substrate while annealing said substrate; and
performing the annealing on said substrate while controlling an annealing temperature for said substrate on the basis of said measured emissivity ε.
4. The annealing method of claim 3 ,
wherein the step of measuring emissivity ε includes a step of measuring reflectance r on said reverse face of said substrate for measuring said emissivity ε by using said measured reflectance r.
5. The annealing method of claim 3 , wherein said doped polysilicon film is simultaneously formed on said top face and said reverse face of said substrate.
6. The annealing method of claim 3 ,
wherein said heating section has a temperature gradient formed in a given region therein, and
the step of performing the annealing on said substrate includes a step of controlling said annealing temperature for said substrate by controlling a position for holding said substrate within said given region with said substrate placing section.
7. A method for fabricating a semiconductor device using an annealing system including a substrate placing section, a heating section for annealing a substrate placed on said substrate placing section and a measuring section for measuring emissivity ε of said substrate placed on said substrate placing section, comprising the steps of:
forming a doped polysilicon film on a top face and a reverse face of said substrate before placing said substrate on said substrate placing section;
removing a portion of said doped polysilicon film having been formed on said reverse face of said substrate before placing said substrate on said substrate placing section;
measuring said emissivity ε on a reverse face of said substrate with said measuring section while placing said substrate on said substrate placing section in a state where no doped polysilicon film is formed on said reverse face of said substrate while annealing said substrate with said heating section; and
performing the annealing on said substrate while controlling an annealing temperature for said substrate on the basis of said measured emissivity ε.
8. The method for fabricating a semiconductor device of claim 7 ,
wherein the step of measuring said emissivity ε includes a step of measuring reflectance r on said reverse face of said substrate for measuring said emissivity ε by using said measured reflectance r.
9. The method for fabricating a semiconductor device of claim 7 ,
wherein said doped polysilicon film is simultaneously formed on said top face and said reverse face of said substrate.
10. The method for fabricating a semiconductor device of claim 7 ,
wherein said heating section has a temperature gradient formed in a given region therein, and
the step of performing annealing on said substrate includes a step of controlling said annealing temperature for said substrate by controlling a position for holding said substrate within said given region with said substrate placing section.
11. A method for fabricating a semiconductor device using an annealing system including a substrate placing section, a heating section for annealing a substrate placed on said substrate placing section and a measuring section for measuring emissivity ε of said semiconductor substrate placed on said substrate placing section, comprising the steps of:
forming a doped polysilicon film in at least a memory cell region on a top face and a reverse face of said substrate before placing said substrate on said substrate placing section;
removing a portion of said doped polysilicon film having been formed on said reverse face of said substrate before placing said substrate on said substrate placing section;
measuring said emissivity ε on said reverse face of said substrate with said measuring section while placing said substrate on said substrate placing section in a state where no doped polysilicon film is formed on said reverse face of said substrate while annealing said substrate with said heating section; and
performing the annealing on said substrate while controlling an annealing temperature for said substrate on the basis of said measured emissivity ε.
12. The method for fabricating a semiconductor device of claim 11 ,
wherein the step of measuring said emissivity ε includes a step of measuring reflectance r on said reverse face of said substrate for measuring said emissivity ε by using said measured reflectance r.
13. The method for fabricating a semiconductor device of claim 11 ,
wherein said doped polysilicon film is simultaneously formed on said top face and said reverse face of said substrate.
14. The method for fabricating a semiconductor device of claim 11 ,
wherein said heating section has a temperature gradient formed in a given region therein, and
the step of performing annealing on said substrate includes a step of controlling said annealing temperature for said substrate by controlling a position for holding said substrate within said given region with said substrate placing section.