Pattern formation method
View Patent ↗Pattern exposure is performed by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm band at exposure energy of 5 mJ/cm 2 or less. After the pattern exposure, the resist film is developed so as to form a resist pattern.
1. A pattern formation method comprising the steps of:
performing pattern exposure by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm ban at exposure energy of 5 W or less; and
forming a resist pattern by developing said resist film after the pattern exposure.
2. The pattern formation method of claim 1 , wherein said resist film is made of a chemically amplified resist material.
3. The pattern formation method of claim 1 , wherein said extreme UV has a wavelength of a 13.5 nm band.
4. The pattern formation method of claim 1 , wherein the resist film includes a photo acid generator comprising triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium nonafluorobutanesulfonate, benzeneimino trifluoromethanesulfonate, naphthaleneimino trifluoromethanesulfonate, phthalimino trifluoromethanesulfonate, benzeneimnino nonafluorobutanesulfonate, naphthaleneimino nonafluorobutanesulfonate or phthalimino nonafluorobutanesulfonate.
5. The pattern formation method of claim 1 , wherein the resist film has a protecting group easily released by an acid.
6. The pattern formation method of claim 5 , wherein the protecting group is 1-ethoxyethyl group, 1-methoxyethyl group, 1-benzyloxyethyl group, 1-benzyloxyethyl group, 1-phenoxyethyl group or trimethylsilyl group.
7. A pattern formation method comprising the steps of:
performing pattern exposure by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm band at exposure power of 5 W or less; and
forming a resist pattern by developing said resist film after the pattern exposure.
8. The pattern formation method of claim 7 , wherein said resist film is made of a chemically amplified resist material.
9. The pattern formation method of claim 7 , wherein said extreme UV has a wavelength of a 13.5 nm band.
10. The pattern formation method of claim 7 , wherein the resist film includes a photo acid generator comprising triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium nonafluorobutanesulfonate, benzeneimino trifluoromethanesulfonate, naphthaleneimino trifluoromethanesulfonate, phthalimino trifluoromethanesulfonate, benzeneimino nonafluorobutanesulfonate, naphthaleneimino nonafluorobutanesulfonate or phthalimino nonafluorobutanesulfonate.
11. The pattern formation method of claim 7 , wherein the resist film has a protecting group easily released by an acid.
12. The pattern formation method of claim 11 , wherein the protecting group is 1-ethoxyethyl group, 1-methoxyethyl group, 1-benzyloxyethyl group, 1-benzyloxyethyl group, 1-phenoxyethyl group or trimethylsilyl group.