Semiconductor integrated circuit
View Patent ↗Electrically conductive layers 1 a and 2 a connected to each other via a contact form one inductor, while electrically conductive layers 1 b and 2 b connected to each other via other contact form the other inductor. Since the areas defined by the loops forming these two inductors are equal to each other, the inductances of the inductors are also equal to each other. Between both the inductors, the lengths in the loop of the portions (the conductive layers 1 a and 1 b ) formed on a lower interlayer insulating film are equal to each other, while the lengths in the loop of the portions (the conductive layers 2 a and 2 b ) formed on an upper interlayer insulating film are also equal to each other. This allows external disturbances such as parasitic capacitance to affect both the inductors equally. Accordingly, a voltage controlled oscillator incorporating the invention can stably provide undistorted sinusoidal oscillation signals.
1. A semiconductor integrated circuit comprising
two power supply lines held at different electric potentials, and
two inductors connected in parallel to each other between said two power supply lines and having the same inductance, said two inductors having an even number of total windings,
wherein said two inductors have at least two electrically conductive layers each formed on an interlayer insulating film, and
ratios of a length of an electrically conductive layer formed on one interlayer insulating film and on the other interlayer insulating film to a total length of the electrically conductive layers constituting said inductors are equal to each other between said two inductors.
2. The semiconductor integrated circuit according to claim 1 , wherein
said two inductors have two electrically conductive layers, and
a ratio of a length of a lower electrically conductive layer and a ratio of a length of an upper electrically conductive layer to a total length of an electrically conductive layer constituting each conductor are equal to each other.
3. The semiconductor integrated circuit according to claim 1 , wherein
one of said two inductors comprises
two first upper electrically conductive layers formed on the same interlayer insulating film and having both end portions spaced apart from each other, and
a first lower electrically conductive layer underlying the first upper electrically conductive layers and having an end portion overlapping with the end portion of said two first upper electrically conductive layers in a plan view,
the other of said two inductors comprises
two second upper electrically conductive layers formed on the same interlayer insulating film as said first upper electrically conductive layers, being the same in total length as said first upper electrically conductive layer, and having both end portions spaced apart from each other, and
a second lower electrically conductive layer underlying the second upper electrically conductive layers and having an end portion overlapping with the end portion of said two second upper electrically conductive layers in a plan view, and
said two inductors intersect each other in a plan view.
4. The semiconductor integrated circuit according to claim 1 , wherein
at least parts of said two inductors overlap each other in a plan view.
5. The semiconductor integrated circuit according to claim 4 , wherein
said two inductors are circular in a plan view, and centers of the circles are aligned with each other.
6. The semiconductor integrated circuit according to claim 4 , wherein
said two inductors are polygonal in a plan view.
7. The semiconductor integrated circuit according to claim 1 , wherein
said at least two electrically conductive layers are connected to each other via a contact.
8. The semiconductor integrated circuit according to claim 7 , wherein
said electrically conductive layers are wider at a region where said contact is provided than at other portions.
9. The semiconductor integrated circuit according to claim 1 , wherein
said two inductors are connected to a varactor diode of a voltage controlled oscillator.