Memory device and method of use
View Patent ↗A memory device includes a material layer associated with at least one memory cell. The material layer is alterable to change the electrical resistance of the memory cell.
1. A magnetic memory cell comprising:
a data storage layer;
a reference layer;
a tunnel barrier positioned between the data storage layer and the reference layer; and
an intermediate layer between the data storage layer and the reference layer, wherein the intermediate layer is alterable to permanently change the electrical resistance of the memory cell.
2. The magnetic memory cell of claim 1 , wherein the intermediate layer is alterable by passing an electrical current through the intermediate layer.
3. The magnetic memory cell of claim 1 , wherein the electrical resistance of an intermediate layer, once altered, is increased.
4. The magnetic memory cell of claim 1 , wherein the intermediate layer, once altered, behaves as an open circuit.
5. The magnetic memory cell of claim 2 , wherein the electrical current exceeds a threshold current to alter the intermediate layer.
6. A magnetic memory cell comprising:
a data storage layer;
a reference layer; and
an intermediate layer between the data storage layer and the reference layer, wherein the intermediate layer is a fusible material alterable to change the electrical resistance of the memory cell.
7. The magnetic memory cell of claim 6 , wherein the fusible material is selected from the group consisting of nichrome, polysilicon, and titanium-tungsten.
8. A magnetic memory cell comprising:
a data storage layer;
a reference layer;
an insulating layer between the data storage layer and the reference layer; and
an intermediate layer between the data storage layer and the reference layer, wherein the intermediate layer is alterable to change the electrical resistance of the memory cell.
9. A method for repairing a magnetic random access memory array having a plurality of memory cells comprising the steps of:
identifying a memory cell having a low nominal electrical resistance;
directing a threshold exceeding current through the identified memory cell; and
permanently increasing the electrical resistance of the identified memory cell with the threshold exceeding current.
10. The method of claim 9 , wherein permanently increasing the electrical resistance of the identified memory cell comprises increasing the electrical resistance until the identified memory cell approximates an open circuit.
11. The method of claim 9 , wherein permanently increasing the electrical resistance of the identified memory cell comprises increasing the electrical resistance until the resistance is the same order of magnitude as the resistance of a properly-functioning memory cell.
12. The method of claim 9 , wherein permanently increasing the resistance of the identified memory cell further comprises fusing an intermediate material layer in the memory cell.