Patent Assignment
Reel/Frame 019733/0030
Assignment of Assignor's Interest
Recorded: 2007-08-22
Pages: 33
Assignor
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Executed: 2007-05-18
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Properties
(50)
Information Storage Device Including Heating Elements for Magnetic Memory Elements
Cladded Read Conductor for a Pinned-on-the-Fly Soft Reference Layer
Multi-Function Serial I/O Circuit
Resistive Cross Point Memory with on-Chip Sense Amplifier Calibration Method and Apparatus
Resistive Cross Point Array of Short-Tolerant Memory Cells
Image Capture and Storage Device
Magneto-Resistive Device Having Soft Reference Layer
Read Methods for Magneto-Resistive Device Having Soft Reference Layer
Magneto-Resistive Device Including Soft Reference Layer Having Embedded Conductors
Patent:
6,504,221 →
Application:
09/963,932 →
Method for Modifying Switching Field Characteristics of Magnetic Tunnel Junctions
Test Array and Method for Testing Memory Arrays
Write Current Compensation for Temperature Variations in Memory Arrays
Nonlinear Digital Differential Amplifier Offset Calibration
Magnetoresistive Random Access Memory (Mram) with on-Chip Automatic Determination of Optimized Write Current Method and Apparatus
Low Temperature Systems for Use with Magnetoresistive Circuit Components
Memory Systems and Methods of Making the Same
Patent:
6,594,171 →
Application:
10/093,020 →
Multi-Port Scan Chain Register Apparatus and Method
Magnetic Memory Device
Multi-Bit Magnetic Memory Device
Patent:
6,577,529 →
Application:
10/235,011 →
Mram Parallel Conductor Orientation for Improved Write Performance
Write Current Compensation for Temperature Variations in Memory Arrays
Magneto-Resistive Device Including Clad Conductor
Patent:
6,693,825 →
Application:
10/349,685 →
Magneto-Resistive Device Having Soft Reference Layer
Magnetic Memory Cell
Patent:
6,747,335 →
Application:
10/355,787 →
Memory Device and Method of Use
Patent:
6,982,901 →
Application:
10/355,788 →
Low Temperature Systems for Use with Magnetoresistive Circuit Components
Magnetoresistive Random Access Memory (Mram) with on-Chip Automatic Determination of Optimized Write Current Method and Apparatus
Method for Modifying Switching Field Characteristics of Magnetic Tunnel Junctions
Method and Article for Concentrating Fields at Sense Layers
A Method of Forming a Shared Global Word Line Mram Structure
System and Method for Determining the Logic State of a Memory Cell in a Magnetic Tunnel Junction Memory Device
Method and Article for Concentrating Fields at Sense Layers
Systems and Methods for Communicating with Memory Blocks
Magnetic Memory Element Having Controlled Nucleation Site in Data Layer
Memory Device Array Having a Pair of Magnetic Bits Sharing a Common Conductor Line
Triple Sample Sensing for Magnetic Random Access Memory (Mram) with Series Diodes
Magneto Resistive Storage Device Having a Magnetic Field Sink Layer
Multi-Bit Magnetic Memory Cells
Magnetic Memory Device Having Soft Reference Layer
Shared Volatile and Non-Volatile Memory
Memory Device Capable of Calibration and Calibration Methods Therefor
Magnetic Memory Cell Having an Annular Data Layer and a Soft Reference Layer
Asymmetric Patterned Magnetic Memory
Magnetic Memory Storage Device
Method of Making a Magnetic Tunnel Junction Device
Magnetic Memory Structure Using Heater Lines to Assist in Writing Operations
Multi-Bit Mram Device with Switching Nucleation Sites
Data Storage Device and Method of Forming the Same
Method and System for Data Communication on a Chip
Memory Device and Method of Use
Patent:
7,139,191 →
Application:
11/268,059 →
Related Assignments
(5)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 6, 2001
From: SHARMA, MANISH; TAN, LUNG T
To: HEWLETT-PACKARD COMPANY
Reel/Frame 012060/0461 →
Assignment of Assignor's Interest
Sep 4, 2001
From: PERNER, FREDERICK A.
To: HEWLETT-PACKARD COMPANY
Reel/Frame 012137/0779 →
Assignment of Assignor's Interest
Sep 17, 2001
From: ALTREE, MICAHEL
To: HEWLETT-PACKARD COMPANY
Reel/Frame 012182/0342 →
Assignment of Assignor's Interest
Sep 24, 2001
From: PERNER, FREDERICK A
To: HEWLETT-PACKARD COMPANY
Reel/Frame 012184/0901 →
Assignment of Assignor's Interest
Dec 31, 2001
From: NICKEL, JANICE H.
To: HEWLETT-PACKARD COMPANY
Reel/Frame 012417/0333 →