IP Library Granted Patent US 6,921,954
Granted Patent B2
US 6,921,954 · App. 10/932,693 · Granted Jul 26, 2005

Asymmetric patterned magnetic memory

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Quick Facts
Patent No.
US 6,921,954
App. No.
10/932,693
Granted
Jul 26, 2005
Kind
B2
Abstract

This invention provides an asymmetrically patterned magnetic memory storage device. In a particular embodiment at least one magnetic memory cell is provided. Each magnetic memory cell provides at least one ferromagnetic data layer of a first size, the data layer characterized by an alterable orientation of magnetization, an intermediate layer in contact with the data layer and at least one ferromagnetic reference layer of a second size, the reference layer characterized by a reference magnetic field. The reference layer is in contact with the intermediate layer, opposite from and asymmetric to the data layer. The magnetic memory cell is characterized as having only one-end involvement. More specifically, the asymmetric alignment provides that only one set of magnetic poles are in substantial vertical alignment, and as such subject to the strong influence of one another.

Claims (12)

1. A computer system comprising:

a main board;

at least one central processing unit (CPU) coupled to the main board; and

at least one memory store joined to the CPU by the main board, the memory store having a plurality of memory cells, each memory cell including;

at least one ferromagnetic data layer of a first size having a first end, a second end and a length along a longitudinal axis therebetween, and further characterized by an alterable orientation of magnetization along the longitudinal axis;

an intermediate layer in contact with the data layer; and

a ferromagnetic reference layer of a second size in contact with the intermediate layer, opposite from and asymmetric to the data layer, the reference layer having a first end, a second end, and a length along a longitudinal axis therebetween, and further characterized by a reference magnetic field along orientation of magnetization along the longitudinal axis.

2. The computer system of claim 1 , wherein the interaction between the poles of the data layer and the poles of the reference layer may be characterized as one-end involvement.

3. The computer system of claim 1 , wherein the magnetic field of the data layer is substantially symmetric about the longitudinal axis.

4. The computer system of claim 2 , wherein the data layer is a substantially planar parallelogram with right angles.

5. The computer system of claim 1 , wherein the data layer is smaller than the reference layer.

6. The computer system of claim 5 , wherein the first end of the data layer is substantially vertically aligned with the first end of the reference layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 22, 2007
From: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 019733/0030 →