Multi-bit MRAM device with switching nucleation sites
View Patent ↗A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.
1. A method for producing a magnetic memory cell comprising the following:
forming a first magneto-resistive device having a first sense layer, including:
placing at least one controlled nucleation site on the first sense layer; and,
forming a second magneto-resistive device connected in series with the first magneto-resistive device, the second magneto-resistive device having a second sense layer, including:
placing at least one controlled nucleation site on the second sense layer.
2. A method as in claim 1 wherein nucleation sites on the first sense layer are different in shape relative to nucleation sites on the second sense layer.
3. A method as in claim 1 wherein nucleation sites on the first sense layer are different in size relative to nucleation sites on the second sense layer.
4. A method as in claim 1 wherein nucleation sites on the first sense layer are different in placement relative to nucleation sites on the second sense layer.