Thin film magnetic memory device with magnetic tunnel junction

1. A thin film magnetic memory device, comprising:

a plurality of magnetic memory cells arranged in matrix, and including a magneto-resistance element each having an electric resistance variable in accordance with magnetically written storage data;

a data line through which a read current is fed in accordance with the storage data in a selected memory cell corresponding to an address signal, among said plurality of magnetic memory cells in data read; and

a peripheral circuit for carrying out data read and data write for said selected memory cell; wherein

said peripheral circuit includes a sense amplifier circuit reading the storage data in said selected memory cell based on said read current; and

at least some of transistors electrically coupled to a current path for said read current are designed to have an amount of current leak per a unit size smaller than at least some transistors having a maximum amount of current leak per a unit size among transistors in said peripheral circuit.

2. The thin film magnetic memory device according to claim 1 , wherein

said at least some of transistors electrically coupled to said current path have an absolute value for a threshold voltage higher than at least some transistors having a minimum absolute value for the threshold voltage among the transistors in said peripheral circuit.

3. The thin film magnetic memory device according to claim 1 , wherein

a gate length of said at least some of transistors electrically coupled to said current path is designed such that an amount of current leak per said unit size is minimized.

4. The thin film magnetic memory device according to claim 1 , wherein

said at least some of transistors electrically coupled to said current path have a thickness of a gate insulating film larger than at least some transistors having a minimum thickness of the gate insulating film among the transistors in said peripheral circuit.

5. The thin film magnetic memory device according to claim 1 , wherein

said peripheral circuit further includes a decoder circuit for decoding said address signal to designate said selected memory cell, and

an amount of current leak per said unit size in transistors in said decode circuit is larger than the amount of current leak per said unit size in said at least some of transistors electrically coupled to said current path.

6. The thin film magnetic memory device according to claim 1 , wherein

the peripheral circuit further includes

a data output circuit for outputting read data from said sense amplifier circuit to outside, and

a data input circuit for receiving write data to said selected memory cell, and

an amount of current leak per said unit size in transistors in said data input circuit and said data output circuit is larger than the amount of current leak per said unit size in said at least some of transistors electrically coupled to said current path.

7. The thin film magnetic memory device according to claim 1 , wherein

said data line includes a plurality of bit lines provided corresponding to prescribed sections of said magnetic memory cells respectively,

each of said plurality of magnetic memory cells further includes an access transistor connected in series to said magneto-resistance element between corresponding one of said bit lines and a fixed voltage and selectively turning on, and

said at least some of transistors electrically coupled to said current path include said access transistor.

8. The thin film magnetic memory device according to claim 1 , wherein

said data line includes

a plurality of bit lines provided corresponding to prescribed sections of said magnetic memory cells respectively, and

a read data line connected to said sense amplifier,

said peripheral circuit further includes a plurality of select gate transistors provided between said plurality of bit lines and said read data line respectively and selectively connecting said plurality of bit lines to said read data line, and

said at least some of transistors electrically coupled to said current path include said plurality of select gate transistors.

9. The thin film magnetic memory device according to claim 1 , wherein

said data line includes a plurality of bit lines provided corresponding to prescribed sections of said magnetic memory cells respectively,

each of said plurality of magnetic memory cells further includes an access transistor connected in series to said magneto-resistance element between corresponding one of said bit lines and a fixed voltage and selectively turning on,

said peripheral circuit further includes a plurality of bit line drivers provided corresponding to said plurality of bit lines respectively,

each of said plurality of bit line drivers includes first and second driver transistors electrically coupled between first and second voltages and corresponding one of said bit lines respectively, each turning on and off in a complementary manner in data write and each turning off in data read, and

said at least some of transistors electrically coupled to said current path include said first and second driver transistors.

10. The thin film magnetic memory device according to claim 1 , wherein

said data line includes a plurality of bit lines provided corresponding to prescribed sections of said magnetic memory cells respectively,

each of said plurality of magnetic memory cells further includes an access transistor connected in series to said magneto-resistance element between corresponding one of said bit lines and a fixed voltage and selectively turning on,

said peripheral circuit further includes a plurality of precharge transistors provided between said plurality of bit lines and a prescribed voltage respectively, and each precharging corresponding one of said bit lines to said prescribed voltage, and

said at least some of transistors electrically coupled to said current path include said plurality of precharge transistors.

11. The thin film magnetic memory device according to claim 1 , wherein

said data line includes

a plurality of bit lines provided corresponding to prescribed sections of said magnetic memory cell respectively, and

a plurality of read data lines connected to said sense amplifier, and each associated in advance with a portion of said plurality of bit lines, and

said peripheral circuit further includes a plurality of select gate transistors provided corresponding to said plurality of bit lines respectively, each electrically coupled between corresponding one of said bit lines and corresponding one of said read data lines, and turning on in response to said address signal.

12. The thin film magnetic memory device according to claim 11 , wherein

said at least some of transistors electrically coupled to said current path include said plurality of select gate transistors.

13. The thin film magnetic memory device according to claim 1 , wherein

said data line includes

a plurality of bit lines provided corresponding to prescribed sections of said magnetic memory cells respectively, and

a read data line connected to said sense amplifier,

each of said plurality of magnetic memory cells further includes an access transistor connected in series to said magneto-resistance element between corresponding one of said bit lines and a fixed voltage and selectively turning on at least in said selected memory cell,

a selected bit line connected to said fixed voltage via said selected memory cell among said plurality of bit lines in data read is further connected to a voltage different from said fixed voltage,

said peripheral circuit includes a read gate transistor for driving said read data line with a driving force in accordance with a potential of said selected bit line, and

said at least some of transistors electrically coupled to said current path include said read gate transistor.

14. A thin film magnetic memory device, comprising:

a plurality of magnetic memory cells arranged in matrix, and including a magneto-resistance element each having an electric resistance variable in accordance with magnetically written storage data;

a data line through which a read current is fed in accordance with the storage data in a selected memory cell corresponding to an address signal, among said plurality of magnetic memory cells in data read; and

a peripheral circuit for carrying out data read and data write for said selected memory cell; wherein

said peripheral circuit includes a sense amplifier circuit reading the storage data in said selected memory cell based on said read current; and

at least some of transistors electrically coupled to a current path for said read current have an SOI structure.

15. A thin film magnetic memory device, comprising:

a plurality of magnetic memory cells arranged in matrix, and including a magneto-resistance element each having an electric resistance variable in accordance with magnetically written storage data;

a plurality of write current lines for selectively generating a data write magnetic field to be applied to a selected memory cell corresponding to an address signal, among said plurality of magnetic memory cells; and

a peripheral circuit for carrying out data read and data write for said selected memory cell; wherein

said peripheral circuit includes a plurality of write driver transistors provided corresponding to said plurality of write current lines respectively and supplying a data write current to corresponding one of said current write lines; and

each of said write driver transistors is designed so as to have an amount of current leak per a unit size smaller than at least some transistors having a maximum amount of current leak per a unit size among transistors in said peripheral circuit.

16. The thin film magnetic memory device according to claim 15 , wherein

each of said write driver transistors has an absolute value for a threshold voltage higher than at least some transistors having a minimum absolute value for the threshold voltage among the transistors in said peripheral circuit.

17. The thin film magnetic memory device according to claim 15 , wherein

a gate length of each of said write driver transistors is designed such that an amount of current leak per said unit size is minimized.

18. The thin film magnetic memory device according to claim 15 , wherein

each of said write driver transistors has a thickness of a gate insulating film larger than at least some transistors having a minimum thickness of the gate insulating film among the transistors in said peripheral circuit.

19. A thin film magnetic memory device, comprising:

a plurality of magnetic memory cells arranged in matrix, and including a magneto-resistance element having an electric resistance variable in accordance with magnetically written storage data;

a plurality of write current lines for selectively generating a data write magnetic field to be applied to a selected memory cell corresponding to an address signal, among said plurality of magnetic memory cells; and

a peripheral circuit for carrying out data read and data write for said selected memory cell; wherein

said peripheral circuit includes a plurality of write driver transistors provided corresponding to said plurality of write current lines respectively, and supplying a data write current to corresponding one of said current write lines; and

said plurality of write driver transistors have an SOI structure.

20. A thin film magnetic memory device, comprising:

a plurality of magnetic memory cells arranged in matrix, and including a magneto-resistance element each having an electric resistance variable in accordance with magnetically written storage data;

a data line through which a read current is fed in accordance with the storage data in a selected memory cell corresponding to an address signal, among said plurality of magnetic memory cells in data read; and

a peripheral circuit for carrying out data read and data write for said selected memory cell; wherein

said peripheral circuit includes a sense amplifier circuit reading the storage data in said selected memory cell based on said read current; and

at least some of transistors electrically coupled to a current path for said read current are designed to have an amount of current leak per a unit channel width smaller that at least some transistors having a maximum amount of current leak per a unit channel width among transistors in said peripheral circuit.

21. The thin film magnetic memory device according to claim 20 , wherein

said at least some transistors electrically coupled to said current path have an absolute value for a threshold voltage higher that at least some transistors having a minimum absolute value for the threshold voltage among the transistors in said peripheral circuit.

22. The thin film magnetic memory device according to claim 20 , wherein

a gate length of said at least some of transistors electrically coupled to said current path is designed such that an amount of current leak per said unit channel width is minimized.

23. The thin film magnetic memory device according to claim 20 , wherein

said at least some of transistors electrically coupled to said current path have a thickness of a gate insulating film larger that at least some transistors having a minimum thickness of the gate insulating film among the transistors in said peripheral circuit.