Semiconductor led device and producing method
View Patent ↗The present invention provides a semiconductor device with InxGa1-xN crystal passivation layer and manufacturing method thereof which effectively blocks the leakage current between the surface & boundary of a device and a pn-junction boundary, and enhances the light emission efficiency as forming new structural semiconductor devices by removing the conventional dielectric passivation layer and using InxGa1-xN crystal layer instead. A semiconductor device with gallium nitride type crystal passivation layer, wherein said semiconductor device has a p-n junction diode construction and forms a InxGa1-xN crystal passivation layer with a specified thickness and a width around the edge of the upper surface of p-GaN layer which is the top layer of the semiconductor device.
1. A semiconductor device with gallium nitride based crystal passivation layer, wherein said semiconductor device has a p-n junction diode construction and forms an InxGa1-xN (0≦x<1) crystal layer with a specified thickness and a width around the edge of the upper surface of a p-type GaN layer which is the top layer of said semiconductor device as a passivation layer, and wherein said InxGa1-xN (0≦x<1) crystal passivation layer has a value of p-doping concentration substantially less than that of said p-type GaN layer when said InxGa1-xN (0≦x<1) crystal passivation layer is p-type doped.
2. The semiconductor device as claimed in claim 1 , wherein said InxGa1-xN (0≦x<1) crystal passivation layer is formed with a thickness around 0.1 nm–5,000 nm and a width around 0.1 μm–300 μm surrounding the edge of the upper surface of said p-type GaN layer.
3. The semiconductor device as claimed in claim 1 , wherein an electrode face is not covered on the upper section of said InxGa1-xN (0≦x<1) crystal passivation layer.
4. A manufacturing method for a semiconductor device with gallium nitride based crystal passivation layer comprising the steps of:
growing an InxGa1-xN (0≦x<1) crystal passivation layer on the surface of a p-type GaN layer which is the top layer of said semiconductor device, and
forming said InxGa1-xN (0≦x<1) crystal passivation layer around the edge of the upper surface of said p-type GaN layer by removing the center section of said InxGa1-xN (0≦x<1) crystal passivation layer through an etching process,
wherein said InxGa1-xN (0≦x<1) crystal passivation layer has a value of p-doping concentration substantially less than that of said p-type GaN layer when said InxGa1-xN (0≦x<1) crystal passivation layer is p-type doped.
5. The method as claimed in claim 4 , wherein said InxGa1-xN (0≦x<1) crystal passivation layer is grown in a N2 gas environment according to the MOCVD crystal growing method.
6. The method as claimed in claim 4 , wherein said InxGa1-xN (0≦x<1) crystal passivation layer is formed by selecting any one of the etching method among the RIE etching, chemical etching, or photo electrochemical etching methods.
7. The method as claimed in claim 4 , wherein said InxGa1-xN(0≦x<1) crystal passivation layer is formed with a thickness around 0.1 nm–5,000 nm and a width around 0.1 m–300m surrounding the edge of the upper surface of said p-type GaN layer.
8. A semiconductor device with gallium nitride based crystal passivation layer, wherein said semiconductor device has a p-n junction construction and forms an n-type InxGa1-xN (0<x<1) crystal layer with a specific thickness and a width surrounding the edge of the upper surface of a p-type GaN layer which is the top layer of said semiconductor device as a passivation layer.
9. A semiconductor device with gallium nitride based crystal passivation layer, wherein said semiconductor device has a p-n junction construction and forms an n-type GaN crystal layer with a specified thickness and a width surrounding the edge of the upper surface of a p-type GaN layer which is the top layer of said semiconductor device as a passivation layer.