Patent Assignment
Reel/Frame 024723/0532
Assignment of Assignor's Interest
Recorded: 2010-07-22
Pages: 36
Assignor
SAMSUNG ELECTRO-MECHANICS CO., LTD.
Executed: 2010-07-12
Assignee
SAMSUNG LED CO., LTD.
314 MAETAN 3-DONG, YEONGTONG-GU, SUWON,, GYUNGGI-DO, KOREA, REPUBLIC OF
Covered Properties
(452)
Surface-Emitting Light-Emitting Diode
Light Emitting Diode and Method of Fabricating Thereof
Patent:
6,376,865 →
Application:
09/436,137 →
Method of Manufacturing Gan Semiconductor Substrate
Patent:
6,500,747 →
Application:
09/682,746 →
Nitride Semiconductor Light Emitting Device
Method for Growing High Quality Group-Iii Nitride Thin Film by Metal Organic Chemical Vapor Deposition
Blue Light Emitting Diode with Electrode Structure for Distributing a Current Density
Semiconductor Laser Diode Including Ridge Wave Guide and Method of Manufacturing the Same
Method for Manufacturing Semiconducter Laser Diode
Light Emitting Diode, Light Emitting Device Using the Same, and Fabrication Processes Therefor
Gan Based Group Iii-V Nitride Semiconductor Light-Emitting Diode and Method for Fabricating the Same
Semiconductor Laser Diode for Controlling Width of Carrier Inflow Path
Gan Series Surface-Emitting Laser Diode Having Spacer for Effective Diffusion of Holes Between P-Type Electrode and Active Layer, and Method for Manufacturing the Same
Method for Fabricating Semiconductor Light Emitting Device
Light Emitting Diode and Method of Fabricating Thereof
Laser Diode Using Reflective Layer Including Air Layer and Method for Fabricating the Same
Light Emission Diode Package
Method of Isolating Semiconductor Laser Diode
Semiconductor Led Device and Producing Method
Semiconductor Light-Emitting Diode
High-Efficiency Light Emitting Diode
Semiconductor Led Device and Method for Manufacturing the Same
Algalnn Light Emitting Diode
Light Emitting Diode and Method for Fabricating the Same
Semiconductor Laser Diode with Current Restricting Layer and Fabrication Method Thereof
Method for Manufacturing a Gan Based Optical Device
Method for Fabricating Gan-Based Nitride Layer
Gan-Based Semiconductor Junction Structure
Vertical Gan Light Emitting Diode and Method for Manufacturing the Same
Method for Manufacturing Vertical Gan Light Emitting Diodes
Method of Manufacturing Light-Emitting Diode Device
High Power Semiconductor Laser Device
METHOD FOR MANUFACTURING GALLIUM NITRIDE (GaN) BASED SINGLE CRYSTALLINE SUBSTRATE THAT INCLUDES SEPARATING FROM A GROWTH SUBSTRATE
Semiconductor Optoelectronic Device
Gan Based Group Iii-V Nitride Semiconductor Light-Emitting Diode and Method for Fabricating the Same
Multi-Color Light Emitting Diode Package
Patent:
6,812,498 →
Application:
10/673,264 →
Method for Manufacturing Semiconductor Laser Device
White Light Emitting Diode and Method for Manufacturing the Same
Full-Color Light Emitting Device with Four Leads
Gan Led for Flip-Chip Bonding and Method of Fabricating the Same
Method for Manufacturing Gallium Nitride-Based Semiconductor Light Emitting Device
Nitride-Based Semiconductor Device
Fabrication Method of Nitride Semiconductors and Nitride Semiconductor Structure Fabricated Thereby
Method for Separating Sapphire Wafer into Chips
Method for Separating Sapphire Wafer into Chips Using Dry-Etching
Gallium Nitride (Gan)-Based Semiconductor Light Emitting Diode and Method for Manufacturing the Same
Semiconductor Laser Diode with Higher-Order Mode Absorption Layers
Fabrication Method of Nitride-Based Semiconductors and Nitride-Based Semiconductor Fabricated Thereby
Patent:
6,844,569 →
Application:
10/831,190 →
Led Package
Method of Manufacturing Gallium Nitride-Based Single Crystal Substrate
Nitride Semiconductor Light Emitting Device and Method of Manufacturing the Same
High Power Flip Chip Led
Nitride Semiconductor Light Emitting Device
Nitride Semiconductor Light Emitting Device and Method for Manufacturing the Same
Method of Manufacturing Gallium Nitride Based Semiconductor Light Emitting Device
Flip Chip Type Nitride Semiconductor Light Emitting Device and Manufacturing Method Thereof
Flip Chip Nitride Semiconductor Light Emitting Diode
Method for Producing Molding Compound Resin Tablet for Wavelength Conversion, and Method for Manufacturing White Light Emitting Diode by Using the Production Method
Nitride Semiconductor Light Emitting Diode and Fabrication Method Thereof
Nitride Semiconductor Led Improved in Lighting Efficiency and Fabrication Method Thereof
Light Emitting Diode Array Module for Providing Backlight and Backlight Unit Having the Same
Process for Producing Nitride Semiconductor Light-Emitting Device
Nitride semiconductor light-emitting device and process for producing the same
Gallium Nitride-Based Semiconductor Light-Emitting Device
Backlight Unit of Liquid Crystal Display
Light Emitting Diode Device
Vertical Light Emitting Type Backlight Module
Light Emitting Diode Module for Automobile Headlights and Automobile Headlight Having the Same
Flip Chip Type Nitride Semiconductor Light-Emitting Diode
Device for Driving Light Emitting Diode for Flash of Camera
Two-Wavelength Semiconductor Laser Device and Method of Manufacturing the Same
Nitride Based Semiconductor Device
Light Emitting Device and Method of Manufacturing the Same
Nitride Semiconductor Light-Emitting Device
Led Package for Backlight Unit
Fabrication Method of Light Emitting Diode Incorporating Substrate Surface Treatment by Laser and Light Emitting Diode Fabricated Thereby
Light Emitting Diode Lens and Backlight Apparatus Having the Same
Light Emitting Diode Package
Multi-Lens Light Emitting Diode
Rgb Light Emitting Diode Package with Improved Color Mixing Properties
Led Package and Backlight Assembly for Lcd Comprising the Same
Light Emitting Diode Package and Light Source Comprising the Same
Red Phosphor and Method of Preparing the Same, and Red Light Emitting Diode, White Light Emitting Diode, and Active Dynamic Liquid Crystal Device Using the Red Phosphor
Nitride Semiconductor Light Emitting Device
Semiconductor Laser Diode
Lcd Backlight Unit and Lcd Having the Same
Multi-Wavelength Laser Diode
Nitride Semiconductor Light Emitting Device
Light Emitting Diode and Method for Manufacturing the Same
Nitride Semiconductor Device and Method of Manufacturing the Same
Nitride Semiconductor Light Emitting Device Having Electrostatic Discharge(Esd) Protection Capacity
Backlight Apparatus Reduced in Thickness
Large Size Backlight Apparatus Reduced in Thickness
Phosphor Blends for Wavelength Conversion and White Light Emitting Device Using the Same
Monolithic White Light Emitting Device
Monolithic White Light Emitting Device Having Nitride Cladding Layers and Passive Layer
Dipolar Side-Emitting Led Lens and Led Module Incorporating the Same
Nitride Based Semiconductor Device
Semiconductor Light-Emitting Device with Improved Light Extraction Efficiency
Semiconductor Laser Diode with Thermal Conductive Encapsulating Resin, and Method for Manufacturing the Same
Semiconductor Laser Diode Package
Direct-Illumination Backlight Apparatus Having Transparent Plate Acting as Light Guide Plate
Flip-Chip Type Nitride Semiconductor Light Emitting Diode
Method of Fabricating Laser Diode
Vertical Type Nitride Semiconductor Light Emitting Diode
Multi-Wavelength Semiconductor Laser Device
High Power Light Emitting Diode Package
Wavelenght Converted Light Emitting Apparatus Using Phosphor and Manufacturing Method Thereof
Nitride Based Semiconductor Device and Process for Preparing the Same
Nitride Based Semiconductor Device Using Nanorods and Process for Preparing the Same
Gan-Based Compound Semiconductor Light Emitting Device
Gallium Nitride-Based Light Emitting Device Having Esd Protection Capacity and Method for Manufacturing the Same
Light Emitting Device Package
Multi-Layer Electrode and Compound Semiconductor Light Emitting Device Comprising the Same
Fabrication Method of Multi-Wavelength Semiconductor Laser Device
Light Emitting Device Having Protection Element and Method of Manufacturing the Light Emitting Device
Light Guide Plate Having Multi-Periodic Patterns and Illumination Apparatus for Display Device Using the Light Guide Plate
Semiconductor Light Emitting Device and Method of Manufacturing the Same
Semiconductor Light Emitting Device Having Textured Structure and Method of Manufacturing the Same
Semiconductor Light Emitting Diode Having High Efficiency and Method of Manufacturing the Same
Wavelength-Convertible Light Emitting Device
Light Emitting Diode Package with Protective Function Against Electrostatic Discharge
Led Package Using Si Substrate and Fabricating Method Thereof
Light Emitting Diode Package Including Monitoring Photodiode
Group Iii-Nitride Light Emitting Device
Fabrication Method of Light Emitting Diode Package
Group Iii-Nitride Light Emitting Device
Nitride Semiconductor Light-Emitting Device Having High Light Efficiency and Method of Manfacturing the Same
Side-Emission Typy Led Package
Semiconductor Laser Device and Method for Manufacturing the Same
Side View Led Package Having Lead Frame Structure Designed to Improve Resin Flow
Led Package Frame and Led Package Having the Same
Flip Chip Type Nitride Semiconductor Light Emitting Device
Led Array Driving Apparatus and Backlight Driving Apparatus Using the Same
Phosphor Blend for Wavelength Conversion and White Light Emitting Device Using the Same
Semiconductor Light Emitting Diode Having Textured Structure and Method of Manufacturing the Same
Light Emitting Diode Package and Fabrication Method Thereof
High Power Led Housing and Fabrication Method Thereof
Method for Fabricating Superlattice Semiconductor Structure Using Chemical Vapor Deposition
Light Emitting Device Package
Method of Growing Non-Polar a-Plane Gallium Nitride
Side-Emitting Led Package Having Scattering Area and Backlight Apparatus Incorporating the Led Lens
Nitride Based Semiconductor Light-Emitting Device
Diffuser Sheet for Compensating for Chromatic Dispersion and Illumination Apparatus Employing the Same
Backlight Unit for Flat Panel Display and Flat Panel Display Apparatus Having the Same
Method for Manufacturing Vertical Group Iii-Nitride Light Emitting Device
Carboxylic Ester Dispersant and Sulfide Phosphor Paste Composition Having Same
Method of Producing Nitride Layer and Method of Fabricating Vertical Structure Nitride Semiconductor Light Emitting Device
Sulfur-Containing Dispersant and Sulfide Phosphor Paste Composition Comprising the Same
Backlight Unit for Lcd Using Led
Electrode Structure, and Semiconductor Light-Emitting Device Having the Same
Backlight Unit for Flat Panel Display and Flat Panel Display Apparatus Having the Same
Vertical Nitride Based Semiconductor Light Emitting Device Having Improved Light Extraction Efficiency
Nitride Semiconductor Light Emitting Device
Dc-Dc Converter Having Protective Function of Over-Voltage and Over-Current and Led Driving Circuit Using the Same
Method of Forming Ohmic Contact Layer and Method of Fabricating Light Emitting Device Having Ohmic Contact Layer
Method of Fabricating Light Emitting Diode Package
Dispersant having silane head and phosphor paste composition comprising the same
Application:
11/440,248 →
Publication:
US 2007/0092758
High Power Light Emitting Diode Package and Fabrication Method Thereof
White Light Emitting Device
Gallium Nitride Semiconductor Light Emitting Device and Method of Manufacturing the Same
Side-Emitting Led Package and Manufacturing Method of the Same
High Power Led Package and Fabrication Method Thereof
Light Emitting Diode and Method of Fabricating the Same
Method for Manufacturing Nitride-Based Semiconductor Device
Light-Emitting Device and Method of Manufacturing the Same
Light Emitting Device Package
Method of Fabricating Nitride-Based Compound Layer, Gan Substrate and Vertical Structure Nitride-Based Semiconductor Light Emitting Device
Light Emitting Diode Driving Circuit for Backlight Having Constant Current Control Function
Side-View Light Emitting Diode Having Improved Side-Wall Reflection Structure
Silicophosphate-Based Phosphor and Light-Emitting Device Including the Same
Surface Light Source and Backlight Unit Having the Same
Surface Light Source Using Led and Backlight Unit Having the Surface Light Source
Light Emitting Diode Package Having Dual Lens Structure for Lateral Light Emission
Led Package and Fabricating Method Thereof
Light Emitting Diode Package with Diffuser and Method of Manufacturing the Same
Method for Manufacturing Nitride Based Single Crystal Substrate and Method for Manufacturing Nitride Based Semiconductor Device
Light Emitting Diode Package
Side-View Light Emitting Diode Having Protective Device
Nitride Semiconductor Light Emitting Device
Led Package Having Recess in Heat Conducting Part
Led Light Source Lens Having Upper, Central and Lower Parts
Light Guide Panel and Display Device Employing the Same
Composite Phosphor Powder, Light Emitting Device Using the Same and Method for Manufacturing Composite Phoshpor Powder
Projection System Employing Semiconductor Diode
Flexible display using semiconductor light-emitting device and method of manufacturing the same
Application:
11/508,911 →
Publication:
US 2007/0152577
Nanowire Light Emitting Device and Method of Manufacturing the Same
Led Lens for Backlight
Group Iii-Nitride Semiconductor Thin Film, Method for Fabricating the Same, and Group Iii-Nitride Semiconductor Light Emitting Device
Light Emitting Diode Module
Light Emitting Diode Module with Heat Spreading Plate Between Capping Layer and Phosphor Layer
Circuit for Controlling Led with Temperature Compensation
Method for Manufacturing Vertical Structure Light Emitting Diode
Total Internal Reflection Micro Lens Array
Method of Forming Phosphor Film and Method of Manufacturing Light Emitting Diode Package Incorporating the Same
Nitride Semiconductor Device
Nitride-Based Semiconductor Light Emitting Device with Light Extraction Layer Formed Within
Method for Manufacturing Vertically Structured Light Emitting Diode
Led Backlight Unit
Field Sequential Color Mode Liquid Crystal Display
Drive Device of Color Led Backlight
Application:
11/566,565 →
Publication:
US 2007/0200513
Nitride Semiconductor Light Emitting Device
Nitride Semiconductor Light Emitting Device
Nitride Semiconductor Light Emitting Device
Method of Manufacturing Vertical Nitride Light Emitting Device
Vertical Type Nitride Semiconductor Light Emitting Device and Method of Manufacturing the Same
Led Backlight Apparatus with Color Deflection Removed at Periphery Thereof
Semiconductor Device Package
Semiconductor Light Emitting Device with Improved Current Spreading Structure
Light Guide Panel
Led Package and Backlight Unit Using the Same
Semiconductor Light Emitting Diode and Method for Manufacturing the Same
Lens for Uniformly Distributing Light and Optical Emitting Device Using the Same
Slim type backlight unit
Application:
11/600,059 →
Publication:
US 2007/0139929
White light emitting device
Application:
11/600,107 →
Publication:
US 2007/0159064
Light Guide Plate of Led Backlight Unit
Method for manufacturing front scattering film having no wavelength dependency
Application:
11/602,951 →
Publication:
US 2007/0116896
Side view light emitting diode package
Application:
11/603,839 →
Publication:
US 2007/0120234
Light-Emitting Diode Device Generating Light of Multi-Wavelengths
Light Emitting Diode Package
Dimming Structure for Image Display Device
Nitride-Based Semiconductor Light-Emitting Device and Method of Manufacturing the Same
Backlight Unit Improved in Light Mixing Feature
Chip Coated Light Emitting Diode Package and Manufacturing Method Thereof
GaN-based semiconductor light-emitting device and method of manufacturing the same
Application:
11/654,602 →
Publication:
US 2007/0235814
Color Led Driver
Optical Thin Film, Semiconductor Light Emitting Device Having the Same and Methods of Fabricating the Same
Multilayered White Light Emitting Diode Using Quantum Dots and Method of Fabricating the Same
High Power Semiconductor Laser Device
Method of Manufacturing High Power Array Type Semiconductor Laser Device
Led Housing and Fabrication Method Thereof
Method of Forming Fine Pattern Using Azobenzene-Functionalized Polymer and Method of Manufacturing Nitride-Based Semiconductor Light Emitting Device Using the Method of Forming Fine Pattern
Phosphor for White Light-Emitting Device and White Light-Emitting Device Including the Same
Method of Manufacturing Nitride-Based Semiconductor Light Emitting Device
Facet Extraction Led and Method for Manufacturing the Same
Led Backlight Unit Including Light Guide Plate with Fixing Means
Light Emitting Diode Package
Method for manufacturing light emitting diode package
Application:
11/708,471 →
Publication:
US 2007/0212802
Method of manufacturing light emitting diode package
Led Package
White Light Emitting Device
Light Emitting Diodes and Display Apparatuses Using the Same
Method of Fabricating Vertical Structure Nitride Semiconductor Light Emitting Device
Backlight Unit Equipped with Light Emitting Diodes
Light Emitting Diode Package
Nitride Semiconductor Single Crystal Substrate, and Methods of Fabricating the Same and a Vertical Nitride Semiconductor Light Emitting Diode Using the Same
LED backlight unit without printed circuit board and method of manufacturing the same
Application:
11/723,235 →
Publication:
US 2007/0221942
White Light Emitting Device
White light emitting device
Application:
11/730,246 →
Publication:
US 2007/0228931
Light emitting diode chip
Application:
11/730,791 →
Publication:
US 2007/0284594
Light Guide Plate and Liquid Crystal Display Device Having the Same
Light emitting diode package and fabrication method thereof
Application:
11/730,965 →
Publication:
US 2007/0241362
Light Emitting Diode Package Having Anodized Insulation Layer and Fabrication Method Therefor
Apparatus for Driving Led Arrays
Light Emitting Device Having Multi-Pattern Structure and Method of Manufacturing Same
Method for Controlling Fluidity of Phosphor, Phosphor and Phosphor Paste
Application:
11/748,297 →
Publication:
US 2008/0103276
Backlight unit using light emitting diode
Application:
11/783,130 →
Publication:
US 2007/0236447
Backlight unit for liquid crystal display device
Led Package
Light Emitting Diode Package Having Multi-Stepped Reflecting Surface Structure and Fabrication Method Thereof
Backlight for Liquid Crystal Display Using Light Emitting Diode
Edge-Type Backlight Unit
Led Driving Device of Overvoltage Protection and Duty Control
Method of Forming Nitride Film and Nitride Structure
Method of Growing Non-Polar M-Plane Nitride Semiconductor
Polarized Light Emitting Diode and Method of Forming the Same
Light Emitting Diode Back Light Unit
Light Emitting Package and Light Emitting Package Array
Surface Light Source Device and Backlight Unit Having the Same
Method of Manufacturing Nitride-Based Semiconductor Light-Emitting Device
Light Emitting Diode Module for Line Light Source
Liquid Crystal Display Backlight Driving System with Light Emitting Diodes
Liquid crystal display driving system having light emitting diodes
Application:
11/806,309 →
Publication:
US 2008/0002103
LED module and method of manufacturing the same
Application:
11/806,906 →
Publication:
US 2008/0029778
Multiple Reflection Layer Electrode, Compound Semiconductor Light Emitting Device Having the Same and Methods of Fabricating the Same
Nitride-Based Semiconductor Light Emitting Device and Method of Manufacturing the Same
High Power Light Emitting Diode Package and Method of Producing the Same
Wavelength Conversion Laser Apparatus
Wavelength Conversion Laser Device
Top-Emitting N-Based Light Emitting Device and Method of Manufacturing the Same
White light emitting diode module
Application:
11/819,568 →
Publication:
US 2008/0048193
Nitride semiconductor light emitting device array
Application:
11/819,785 →
Publication:
US 2008/0012030
Selective Growth Method, Nitride Semiconductor Light Emitting Device and Manufacturing Method of the Same
Polarized Semiconductor Light Emitting Device with Light Guiding Portions Formed Within
Direct-Type Backlight Unit Having Surface Light Source
Method of Growing a Nitride Single Crystal on Silicon Wafer, Nitride Semiconductor Light Emitting Diode Manufactured Using the Same and the Manufacturing Method
Method of Producing Multi-Wavelength Semiconductor Laser Device
Method of Producing Multi-Wavelength Semiconductor Laser Device
Vertical light emitting device and method of manufacturing the same
Application:
11/878,348 →
Publication:
US 2008/0111139
Method of Manufacturing Vertical Light Emitting Device
Semiconductor Light Emitting Device and Method of Manufacturing the Same Employing Nanowires and a Phosphor Film
Surface Light Source Device Using Light Emitting Diodes
Method of manufacturing III group nitride semiconductor thin film and method of manufacturing III group nitride semiconductor device using the same
Application:
11/898,955 →
Publication:
US 2008/0099781
Nitride semiconductor light emitting device and manufacturing method of the same
Application:
11/902,396 →
Publication:
US 2008/0078986
Nitride Semiconductor Device with Superlattice Active Layer Including Barrier Layers with Different Energy Band Gaps
Nitride semiconductor light emitting device and method of manufacturing the same
Application:
11/907,564 →
Publication:
US 2008/0099776
Nitride Semiconductor Light Emitting Diode Having Mesh Dbr Reflecting Layer
Method of Growing Iii Group Nitride Single Crystal and Iii Group Nitride Single Crystal Manufactured by Using the Same
Wavelength Conversion Laser Apparatus
Nitride Semiconductor Light Emitting Device and Method of Manufacturing the Same
Back Light Unit Having Light Guide Buffer Plate
Vertical Structure Led Device and Method of Manufacturing the Same
White Light Emitting Device and White Light Source Module Using the Same
Light Emitting Device
Reflective Electrode and Compound Semiconductor Light Emitting Device Including the Same
Phosphors and Light Emitting Device Using the Same
White light emitting device and light source module for liquid crystal display backlight using the same
Application:
12/003,814 →
Publication:
US 2008/0180948
Semiconductor light emitting device
Fabrication Method of Micro-Lens and Fabrication Method of Master for Micro-Lens
LED package
Application:
12/007,371 →
Publication:
US 2008/0179616
Method of Manufacturing Light Emitting Diode Package
Photonic Crystal Light Emitting Device Using Photon-Recycling
Nitride semiconductor light emitting device and method of manufacturing the same
Application:
12/007,497 →
Publication:
US 2010/0283070
Printed Circuit Board Connector for Back Light Unit and Chassis Using the Same
Light Emitting Diode Chip Package
White Light Emitting Device
High Power Light Emitting Diode Package
Patent:
43,200 →
Application:
12/029,220 →
Ba-Sr-Ca CONTAINING COMPOUND AND WHITE LIGHT EMITTING DEVICE INCLUDING THE SAME
Application:
12/048,945 →
Publication:
US 2008/0239206
Light emitting device for alternating current source
Application:
12/068,392 →
Publication:
US 2008/0185595
Light Emitting Diode Package
Light Emitting Device, Method of Manufacturing the Same and Monolithic Light Emitting Diode Array
Backlight Unit Having Light Emititng Diodes and Method of Manufacturing the Same
Light Emitting Device and Package Having the Same
Surface Light Source Using White Light Emitting Diodes and Liquid Crystal Display Backlight Unit Having the Same
Nitride Semiconductor Light Emitting Device
Small Size Light Emitting Device and Manufacturing Method of the Same
Application:
12/081,888 →
Publication:
US 2008/0290359
Light Emitting Diode Array Driving Apparatus
Light Emitting Diode Driving Device
Plane Light Source and Lcd Backlight Unit Having the Same
Light Emitting Diode Package with Metal Reflective Layer and Method of Manufacturing the Same
Semiconductor Light Emitting Device and Method of Manufacturing the Same
Side-Emitting Led Package and Method of Manufacturing the Same
Gallium Nitride Based Semiconductor Light Emitting Diode and Process for Preparing the Same
Application:
12/166,113 →
Publication:
US 2008/0286894
Backlight Unit Implementing Local Dimming for Liquid Crystal Display Device
Semiconductor Light Emitting Device
Photonic Crystal Light Emitting Device and Manufacturing Method of the Same
Photonic Crystal Light Emitting Device
Nitride Semiconductor Device
Semiconductor Light Emitting Device, Method of Manufacturing the Same, and Semiconductor Light Emitting Device Package Using the Same
Nitride Semiconductor Light Emitting Device
Application:
12/195,077 →
Publication:
US 2009/0050874
Nitride Semiconductor Light Emitting Device
Application:
12/195,088 →
Publication:
US 2009/0050875
Showerhead and Chemical Vapor Deposition Apparatus Having the Same
Application:
12/196,453 →
Publication:
US 2009/0178615
Plane Light Source and Lcd Backlight Unit Having the Same
Light Emitting Diode Package
Nitride Semiconductor Light Emitting Device and Method of Manufacturing the Same
Semiconductor Light Emitting Device and Method of Manufacturing the Same
Light Emitting Diode Driving Circuit and Light Emitting Diode Array Device
Encapsulant Shapes for Light Emitting Devices Lacking Rotational Symmetry Designed to Enhance Extraction of Light with a Particular Linear Polarization
Reflector Shapes for Light Emitting Diode-Polarized Light Sources
Light Emitting Device Having Protrusion and Recess Structure and Method of Manufacturing the Same
Vertical Semiconductor Light-Emitting Device and Method of Manufacturing the Same
Nitride Semiconductor Light Emitting Device and Manufacturing Method of the Same
Led Package and Method of Manufacturing the Same
Application:
12/236,086 →
Publication:
US 2009/0230410
Method of Forming Fine Patterns and Manufacturing Semiconductor Light Emitting Device Using the Same
Light Emitting Diode Substrate Module and Method of Manufacturing the Same, and Backlight Unit and Method of Manufacturing the Same
Method of Growing Semi-Polar Nitride Single Crystal Thin Film and Method of Manufacturing Nitride Semiconductor Light Emitting Diode Using the Same
Showerhead for Chemical Vapor Deposition and Chemical Vapor Deposition Apparatus Having the Same
Method of Manufacturing Nitride Semiconductor Light Emitting Device and Nitride Semiconductor Light Emitting Device Manufactured Using the Method
White Light Emitting Device
Nitride Semiconductor Light Emitting Device and Method of Manufacturing the Same
Application:
12/251,782 →
Publication:
US 2009/0166669
Gan-Based Semiconductor Light Emitting Device
Nitride Semiconductor Light-Emitting Device with Electrode Pattern
Application:
12/252,660 →
Publication:
US 2009/0159909
Susceptor and Chemical Vapor Deposition Apparatus Including the Same
Application:
12/253,514 →
Publication:
US 2009/0277387
Chemical Vapor Deposition Apparatus
Chemical Vapor Deposition Apparatus
Led Driving Circuit and Light Emitting Diode Array Device
Chemical Vapor Deposition Apparatus
Application:
12/263,781 →
Publication:
US 2009/0260572
Method of Growing Nitride Single Crystal and Method of Manufacturing Nitride Semiconductor Light Emitting Device
Ac Driven Light Emitting Device
Light Emitting Device and Method of Manufacturing the Same
Light Emitting Diode Package and Method of Manufacturing the Same
Application:
12/266,640 →
Publication:
US 2009/0230418
Illumination Apparatus for Adjusting Color Temperature and Brightness and Illumination System Including the Same
Planar Light Source and Backlight Unit Including the Same
Lighting Apparatus Using Light Emitting Device Package
Vertical Group Iii-Nitride Light Emitting Device and Method for Manufacturing the Same
Semiconductor Light Emitting Device Having Patterned Substrate
Semiconductor Light Emitting Device and Method of Manufacturing the Same
Led Inspection Apparatus and Led Inspection Method Using the Same
Light Emitting Device and Backlight Unit Including the Same
Sub-Mount, Light Emitting Diode Package and Manufacturing Method Thereof
High Power Light Emitting Diode Package and Manufacturing Method Thereof
Application:
12/327,552 →
Publication:
US 2009/0166664
Method for Manufacturing Nitride Based Single Crystal Substrate and Method for Manufacturing Nitride Based Light Emitting Diode Using the Same
Planar Light Source and Backlight Unit Having the Same
Light Emitting Diode Package
Application:
12/332,678 →
Publication:
US 2009/0095975
Nitride Semiconductor Light Emitting Device
Fabrication Method of Lithography Mask and Formation Method of Fine Pattern Using the Same
Semiconductor Light Emitting Device
Nitride Semiconductor Light Emitting Device
Light Emitting Diode Package
Ceramic Package for Headlamp and Headlamp Modul Having the Same
Nitride Semiconductor Device
Nitride Semiconductor Device
Application:
12/352,941 →
Publication:
US 2010/0176374
Light Emitting Diode Package and Fabrication Method Thereof
Quantum Dot-Wavelength Converter, Manufacturing Method of the Same and Light Emitting Device Including the Same
Application:
12/397,102 →
Publication:
US 2010/0051898
Wavelength Conversion Plate and Light Emitting Device Using the Same
Side-View Type Light Emitting Device and Optical Device Including the Same
Nitride Semiconductor Device
Semiconductor Light Emitting Device
Showerhead and Chemical Vapor Deposition Apparatus Including the Same
Application:
12/407,347 →
Publication:
US 2010/0024727
Semiconductor Light Emitting Device and Method of Manufacturing the Same
Surface Treatment Method of Group Iii Nitride Semiconductor and Manufacturing Method of the Group Iii Nitride Semiconductor
Quantum Dot-Metal Oxide Complex, Method of Preparing the Same, and Light-Emitting Device Comprising the Same
Application:
12/421,215 →
Publication:
US 2010/0084629
Group Iii Nitride Semiconductor Thin Film and Group Iii Semiconductor Light Emitting Device Used for a Pre-Deposition Layer
Application:
12/423,283 →
Publication:
US 2009/0224270
Method of Forming Pattern on Group Iii Nitride Semiconductor Substrate and Method of Manufacturing Group Iii Nitride Semiconductor Light Emitting Device
Light Emitting Diode and Method of Manufacturing the Same
Side-View Type Light Emitting Device and Line Light Source Type Light Emitting Device
Cooling Device for Light Emitting Device Package of Vibration Generating Machine and Head Lamp for Vibration Generating Machine
Light Emitting Module
Light Emitting Diode Package
Semiconductor Light Emitting Diode
Application:
12/634,101 →
Publication:
US 2010/0140646
Semiconductor Light Emitting Diode
Nitride semiconductor device and method for making same
Application:
12/655,438 →
Publication:
US 2010/0112742
Nitride Semiconductor Light Emitting Diode
Backlight Unit Equipped with Light Emitting Diodes
Wavelength Conversion Laser Device and Nonlinear Optical Crystal Used in the Same
Application:
12/699,577 →
Publication:
US 2010/0135345
Omni-Directional Reflector and Light Emitting Diode Adopting the Same
Application:
12/721,132 →
Publication:
US 2010/0166983
Light-Emitting Diode
Patent:
495,667 →
Application:
29/195,596 →
Light-Emitting Diode
Patent:
495,668 →
Application:
29/196,033 →
Light-Emitting Diode
Patent:
495,304 →
Application:
29/196,061 →
Light-Emitting Diode
Patent:
499,075 →
Application:
29/199,049 →
Light-Emitting Diode
Patent:
512,693 →
Application:
29/220,170 →
Light-Emitting Diode
Patent:
512,694 →
Application:
29/220,220 →
Light-Emitting Diode
Patent:
512,029 →
Application:
29/220,264 →
Light-Emitting Diode
Patent:
522,468 →
Application:
29/231,960 →
Light-Emitting Diode
Patent:
521,951 →
Application:
29/231,966 →
Light-Emitting Diode
Patent:
533,517 →
Application:
29/231,984 →
Light-Emitting Diode
Patent:
552,046 →
Application:
29/232,938 →
Light-Emitting Diode
Patent:
541,759 →
Application:
29/238,627 →
Light-Emitting Diode
Patent:
528,998 →
Application:
29/238,629 →
Light-Emitting Diode
Patent:
528,999 →
Application:
29/238,653 →
Light-Emitting Diode
Patent:
538,760 →
Application:
29/238,658 →
Light-Emitting Diode
Patent:
537,798 →
Application:
29/238,664 →
Light-Emitting Diode
Patent:
551,180 →
Application:
29/255,109 →
Light-Emitting Diode
Patent:
550,170 →
Application:
29/263,971 →
Light-Emitting Diode
Patent:
550,171 →
Application:
29/263,973 →
Light-Emitting Diode
Patent:
546,783 →
Application:
29/263,974 →
Light-Emitting Diode
Patent:
558,156 →
Application:
29/269,978 →
Light-Emitting Diode
Patent:
570,797 →
Application:
29/271,202 →
Light Emitting Diode
Patent:
593,043 →
Application:
29/271,203 →
Light-Emitting Diode
Patent:
558,693 →
Application:
29/272,668 →
Light-Emitting Diode
Patent:
568,261 →
Application:
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Light-Emitting Diode
Patent:
573,114 →
Application:
29/287,262 →
Light-Emitting Diode
Patent:
579,425 →
Application:
29/290,398 →
Light-Emitting Diode
Patent:
595,243 →
Application:
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Light-Emitting Diode Module
Patent:
591,695 →
Application:
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Light-Emitting Diode
Patent:
576,116 →
Application:
29/290,411 →
Light-Emitting Diode
Patent:
576,117 →
Application:
29/290,412 →
Light-Emitting Diode
Patent:
578,490 →
Application:
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Light-Emitting Diode
Patent:
597,501 →
Application:
29/325,548 →
Case for Light Emitting Diode
Patent:
599,750 →
Application:
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Light-Emitting Diode
Patent:
595,245 →
Application:
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595,246 →
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Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Merger
Dec 14, 2007
From: EPIVALLEY CO., LTD.
To: EPIVALLEY CO., LTD. F/K/A SUNGIL TELECOM CO., LTD.
Reel/Frame 020243/0386 →
Corrective Assignment to Correct the Country Listed for Assignee Previously Recorded on Reel 020243 Frame 0386. Assignor(S) Hereby Confirms the Merger.
May 2, 2008
From: EPIVALLEY CO., LTD.
To: EPIVALLEY CO., LTD. F/K/A SUNGIL TELECOM CO., LTD.
Reel/Frame 020886/0515 →
Merger
May 2, 2012
From: SAMSUNG LED CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028140/0232 →
Merger
Aug 7, 2012
From: SAMSUNG LED CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028744/0272 →