Method for fabricating superlattice semiconductor structure using chemical vapor deposition

1. A method for fabricating a superlattice semiconductor structure comprising steps of:

mounting a substrate on a susceptor within a process chamber;

supplying first and second source gases simultaneously to two different areas on the susceptor within the process chamber to form first and second source gas areas separate from each other; and

rotating the susceptor to revolve the substrate through the first and second source gas areas,

wherein in the susceptor rotating step, a first semiconductor layer is formed when the substrate passes through the first source gas area, and a second semiconductor layer that is different from the first semiconductor layer is formed when the substrate passes through the second source gas area.

2. The method according to claim 1 , wherein the first and second source gases comprise an organometallic source gas.

3. The method according to claim 1 , wherein in the first and second source gases supplying step, the first and second source gases are injected separately into the process chamber and exhausted separately out of the process chamber.

4. The method according to claim 1 , wherein the first semiconductor layer has a first composition of Al a Ga b In 1-a-b P, where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1, and the second semiconductor layer has a second composition of Al c Ga d In 1-c-d P different from the first composition, where 0≦c≦1, 0≦d≦1, and 0≦c+d≦1.

5. The method according to claim 1 , wherein the first semiconductor layer has a first composition of Al x Ga 1-x As, where 0≦x≦1, and the second semiconductor layer has a second composition of Al y Ga 1-y As different from the first composition, where 0≦y≦1.

6. The method according to claim 1 , wherein the first semiconductor layer has a first composition of Al m Ga 1-m N, where 0≦m≦1, and the second semiconductor layer has a second composition of Al n Ga 1-n N different from the fist composition, where 0≦n≦1.

7. The method according to claim 1 , wherein after the substrate starts to revolve on the susceptor, the first and second source gases are supplied to the process chamber.

8. The method according to claim 1 , wherein before the substrate starts to revolve on the susceptor, the first and second source gases are supplied to the process chamber.

9. The method according to claim 1 , wherein during one revolution of the substrate, semiconductor layers corresponding to one cycle of the superlattice semiconductor structure are formed.

10. The method according to claim 1 , wherein the process chamber is a horizontal process chamber, and the first and second source gases are injected thereinto horizontally.

11. The method according to claim 1 , further comprising: supplying a third source gas to a total area on the susceptor within the process chamber while supplying the first and second source gases simultaneously to the process chamber.

12. The method according to claim 11 , wherein the first and second source gases are injected horizontally into the process chamber, and the third source gas is injected vertically into the process chamber.

13. The method according to claim 11 , wherein the third source gas comprises one selected from a group consisting of AsH 3 , PH 3 , and NH 3 .

14. The method according to claim 13 , wherein the third source gas further comprises one selected from a group consisting of H 2 , N 2 and a mixture thereof.

15. The method according to claim 1 , wherein in the susceptor rotating step, the substrate is revolved at a constant speed.

16. The method according to claim 1 , wherein the substrate is revolved at a speed of 1 to 10 rpm.

17. The method according to claim 1 , wherein the thickness of one cycle of the superlattice semiconductor structure is controlled by adjusting revolution speed of the substrate.

18. The method according to claim 1 , wherein in the substrate mounting step, a plurality of substrates are mounted on the susceptor.