Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same

1. A method for manufacturing a nitride based single crystal substrate comprising:

forming a sacrificial layer made of an oxide film or a nitride film on a base substrate;

forming a ZnO layer in a polycrystalline state on the sacrificial layer;

forming a nano-sized ZnO pattern by partially decomposing the ZnO layer;

forming a low-temperature nitride buffer layer using the ZnO pattern as a seed; and

growing a nitride single crystal on the low-temperature nitride buffer layer,

wherein the formation of the nano-sized ZnO pattern is performed by pyrolysis performed at a temperature at which the low-temperature nitride buffer layer is grown.

2. The method as set forth in claim 1 , wherein the base substrate is made of one selected from the group consisting of sapphire, SiC, and silicon.

3. The method as set forth in claim 1 , wherein the low-temperature nitride buffer layer satisfies the composition of Al x Ga y In 1-x-y N (Here, 0≦x≦1 and 0≦y≦1).

4. The method as set forth in claim 1 , wherein the formation of the low-temperature nitride buffer layer is performed at a temperature of 400˜700° C.

5. A method for manufacturing a nitride based single crystal substrate comprising: forming a sacrificial layer made of an oxide film or a nitride film on a base substrate; forming a ZnO layer in a polycrystalline state on the sacrificial layer; forming a nano-sized ZnO pattern by partially decomposing the ZnO layer; forming a low-temperature nitride buffer layer using the ZnO pattern as a seed; growing a nitride single crystal on the low-temperature nitride buffer layer; and separating the nitride single crystal from the base substrate by chemically eliminating the sacrificial layer, wherein, in the separation of the nitride single crystal from the base substrate, the ZnO pattern is eliminated together with the elimination of the sacrificial layer so that the surface of the low-temperature nitride buffer layer, from which the ZnO pattern is separated, has an uneven pattern.

6. A method for manufacturing a nitride based light emitting diode comprising:

forming a sacrificial layer made of an oxide film or a nitride film on a base substrate;

forming a ZnO layer in a polycrystalline state on the sacrificial layer;

forming a nano-sized ZnO pattern by partially decomposing the ZnO layer;

forming a first conductivity type low-temperature nitride buffer layer using the ZnO pattern as a seed; and

forming a light emitting structure including a first conductivity type nitride layer, an active layer, and a second conductivity type nitride layer on the low-temperature nitride buffer layer,

wherein the formation of the nano-sized ZnO pattern is performed by pyrolysis performed at a temperature at which the low-temperature nitride buffer layer is grown.

7. The method as set forth in claim 6 , wherein the base substrate is made of one selected from the group consisting of sapphire, SiC, and silicon.

8. The method as set forth in claim 6 , wherein the low-temperature nitride buffer layer satisfies the composition of Al x Ga y In 1-x-y N (Here, 0≦x≦1 and 0≦y≦1).

9. The method as set forth in claim 6 , wherein the formation of the low-temperature nitride buffer layer is performed at a temperature of 400˜700° C.

10. A method for manufacturing a nitride based light emitting diode comprising: forming a sacrificial layer made of an oxide film or a nitride film on a base substrate; forming a ZnO layer in a polycrystalline state on the sacrificial layer; forming a nano-sized ZnO pattern by partially decomposing the ZnO layer; forming a first conductivity type low-temperature nitride buffer layer using the ZnO pattern as a seed; forming a light emitting structure including a first conductivity type nitride layer, an active layer, and a second conductivity type nitride layer on the low-temperature nitride buffer layer; and separating the nitride single crystal from the base substrate by chemically eliminating the sacrificial layer, wherein, in the separation of the nitride single crystal from the base substrate, the ZnO pattern is eliminated together with the elimination of the sacrificial layer so that the surface of the first conductivity type low-temperature nitride buffer layer, from which the ZnO pattern is separated, has an uneven pattern.

11. The method as set forth in claim 1 , further comprising separating the nitride single crystal from the base substrate by chemically eliminating the sacrificial layer.

12. The method as set forth in claim 6 , further comprising separating the nitride emitting structure from the base substrate by chemically eliminating the sacrificial layer.