Semiconductor light emitting device and method of manufacturing the same employing nanowires and a phosphor film
View Patent ↗There are provided a semiconductor light emitting device using a phosphor film formed on a nanowire structure and a method of manufacturing the device, the device including: a substrate; a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate; a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures.
1. A semiconductor light emitting device comprising:
a substrate;
a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate;
a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and
a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures,
wherein the phosphor film is additionally formed on the entire area of upper surfaces of the light emitting structure exposed between the plurality of nanowire structures.
2. The semiconductor light emitting device of claim 1 , wherein the plurality of nanowire structures are formed of one selected from a group consisting of Zn x Mg 1-x O (0≦x≦1) and Al x In y Ga 1-x N (0≦x and y≦1).
3. The semiconductor light emitting device of claim 1 , wherein the plurality of nanowire structures are separated at an interval of 2 to 100 nm.
4. The semiconductor light emitting device of claim 1 , wherein the plurality of nanowire structures are formed of a transparent conductive oxide.
5. The semiconductor light emitting device of claim 4 , wherein the transparent conductive oxide is an oxide of at least one element selected from a group consisting of In, Sn, Zn, Ga, Cd, Mg, Be, Ag, Mo, V, Cu, Ir, Rh, Ru, W, Co, Ni, Mn and La.
6. A semiconductor light emitting device comprising;
a substrate;
a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate;
a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and
a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures,
wherein the substrate has electric conductivity,
the semiconductor light emitting device further comprising first and second electrodes formed on a bottom of the substrate and a top of the second conductivity type semiconductor layer, respectively.
7. The semiconductor light emitting device of claim 6 , wherein the phosphor film is additionally formed on upper surfaces of the light emitting structure between the plurality of nanowire structures.