Semiconductor light emitting device and method of manufacturing the same
View Patent ↗Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.
1. A semiconductor light emitting device comprising:
an n-type GaN semiconductor layer;
an active layer formed on a gallium face of the n-type GaN semiconductor layer;
a p-type semiconductor layer formed on the active layer; and
an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and comprising a lanthanum (La)-nickel (Ni) alloy.
2. The semiconductor light emitting device of claim 1 , wherein the La—Ni alloy is LaNi 5 .
3. A method of manufacturing a semiconductor light emitting device, the method comprising:
forming an n-type GaN semiconductor layer on a substrate;
forming an active layer on a gallium face of the n-type GaN semiconductor layer;
forming a p-type semiconductor layer on the active layer;
removing the substrate; and
forming an n-type electrode on a nitrogen face of the n-type GaN semiconductor layer, the n-type electrode including a lanthanum (La)-nickel (Ni) alloy.
4. The method of claim 3 , wherein the La—Ni alloy is LaNi 5 .
5. The method of claim 3 , wherein the substrate is a sapphire substrate.
6. The method of claim 3 , further comprising performing a laser treatment on the nitrogen face of the n-type GaN semiconductor layer before the forming of the n-type electrode.
7. A semiconductor light emitting device comprising:
a GaN substrate;
an n-type semiconductor layer formed on a gallium face of the GaN substrate;
an active layer formed on the n-type semiconductor layer;
a p-type semiconductor layer formed on the active layer; and
an n-type electrode formed on a nitrogen face of the GaN substrate and comprising a lanthanum (La)-nickel (Ni) alloy.
8. The semiconductor light emitting device of claim 7 , wherein the GaN substrate is a growth substrate or a support substrate.
9. The semiconductor light emitting device of claim 7 , wherein the La—Ni alloy is LaNi 5 .
10. A method of manufacturing a semiconductor light emitting device, the method comprising:
forming an n-type semiconductor layer on a gallium face of a GaN substrate;
forming an active layer on the n-type semiconductor layer;
forming a p-type semiconductor layer on the active layer; and
forming an n-type electrode on a nitrogen face of the GaN substrate, the n-type electrode including a lanthanum (La)-nickel (Ni) alloy.
11. The method of claim 10 , wherein the La—Ni alloy is LaNi 5 .
12. The method of claim 10 , further comprising performing a laser treatment on the nitrogen face of the GaN substrate before the forming of the n-type electrode.