Top-emitting N-based light emitting device and method of manufacturing the same

1. A method of manufacturing an N-based light emitting device, the method comprising:

forming a transparent conductive thin film having an amorphous surface on a p-type clad layer of a light emitting structure in which an n-type clad layer, an active layer, and the p-type clad layer are sequentially stacked on a substrate;

wet-etching the amorphous surface of the transparent conductive thin film to form nano-scale patterns; and

annealing the wet-etched transparent conductive thin film so as to transform the amorphous surface having the nano-scale patterns into a polycrystalline surface having crystallized nano-scale patterns, after the step of wet-etching.

2. The method of claim 1 , further comprising:

forming a metal thin film having a thickness within the range of about 0.1 to 50 nm on the p-type clad layer prior to forming the transparent conductive thin film.

3. The method of claim 2 , wherein the metal thin film is formed of one selected from the group consisting of metals of Ni, Co, Cu, Pd, Pt, Ru, Ir, Au, Ag, Cr, Rh, In, Sn, Mg, Zn, Be, Sr, and Ba, or an alloy thereof; or a solid solution comprising two or more of the metals.

4. The method of claim 1 , wherein the transparent conductive thin film is formed of a transparent conductive oxide which is a combination of 0 and at least one selected from the group consisting of In, Sn, Zn, Ga, Ce, Cd, Mg, Be, Ag, Mo, V, Cu, Ir, Rh, Ru, W, Co, Ni, Mn, Al, and La.

5. The method of claim 1 , wherein the transparent conductive thin film is formed to a thickness within the range of about 10 to 700 nm.

6. The method of claim 1 , wherein the wet-etching of the transparent conductive thin film is performed at a temperature within the range of about room temperature to 300° C. for approximately 0.1 seconds to 1 hour.

7. The method of claim 1 , wherein the annealing of the wet-etched transparent conductive thin film is performed at a temperature within the range of about room temperature to 900° C. for approximately 10 seconds to 3 hours.

8. The method of claim 7 , wherein the annealing of the wet-etched transparent conductive thin film is performed in a vacuum or a gas ambient containing at least one of nitrogen (N 2 ), argon (Ar), helium (He), oxygen (O 2 ), hydrogen (H 2 ), and air.

9. The method of claim 1 , wherein the wet-etching of the transparent conductive thin film is performed using an undiluted solution selected from the group consisting of buffered oxide etch (BOE), hydrofluoric acid (HF), hydrochloric acid (HCl), nitric acid (HNO 3 ), phosphoric acid (H 3 PO 4 ), sulfuric acid (H 2 SO 4 ), potassium hydroxide (KOH), oxalic acid, tartaric acid, formic acid, acetic acid, and glycolic acid, a mixture of the undiluted solutions, a diluted solution of the undiluted solution, or a mixture of the undiluted solutions diluted in deionized water.

10. The method of claim 1 , wherein the polycrystalline surface has a surface roughness ranging from 43.9 nm to 142 nm.

11. A method of manufacturing an N-based light emitting device, comprising:

forming a transparent conductive thin film having an amorphous surface on a p-type clad layer of a light emitting structure, the light emitting structure including an n-type clad layer, an active layer, and the p-type clad layer sequentially stacked on a substrate;

wet-etching the amorphous surface of the transparent conductive thin film without using a mask to form nano-scale patterns; and

annealing the wet-etched transparent conductive thin film so as to transform the amorphous surface having the nano-scale patterns into a polycrystalline surface having crystallized nano-scale patterns, after the step of wet-etching.