IP Library Granted Patent US 8,093,615
Granted Patent B2
US 8,093,615 · App. 11/513,221 · Granted Jan 10, 2012

Light emitting diode module

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Quick Facts
Patent No.
US 8,093,615
App. No.
11/513,221
Granted
Jan 10, 2012
Kind
B2
Abstract

A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and a reflection plate that is disposed between the light emitting chip and the phosphor layer and that reflects the light emitted by the phosphor layer.

Claims (8)

1. A light emitting diode module comprising:

a light emitting chip;

a phosphor layer formed of phosphor materials emitting light having a longer wavelength than that of light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and

a reflection plate that is disposed between the light emitting chip and the phosphor layer, and that reflects light, emitted from the phosphor layer by the transmission of light through a substance of the reflection plate, the reflection plate allowing light emitted from the light emitting chip, to be transmitted through the reflection plate by the transmission of light through a substance of the reflection plate; and

wherein a concavo-convex pattern is formed on the surface of the reflection plate which faces the phosphor layer.

2. The light emitting diode module of claim 1 , wherein the concavo-convex pattern is a hemispherical array or a polygonal cavity array.

3. The light emitting diode module of claim 1 , further comprising a first resin layer that has a refractive index smaller than the refractive index of the reflection plate and is formed between the reflection plate and the light emitting chip.

4. The light emitting diode module of claim 1 , wherein the reflection plate is formed of a material selected from the group consisting of SiO 2 , Al 2 O 3 , AlN, and ZnSe.

Assignments (2)
MERGER Recorded Aug 7, 2012
From: SAMSUNG LED CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028744/0272 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2010
From: SAMSUNG ELECTRO-MECHANICS CO., LTD.
To: SAMSUNG LED CO., LTD.
Reel/Frame 024723/0532 →