Light emitting diode module for line light source
View Patent ↗A light emitting diode module for a line light source includes a circuit board having a wire pattern formed thereon and a plurality of LED chips directly mounted and disposed in a longitudinal direction on the circuit board and electrically connected to the wire pattern. The module also includes a reflecting wall installed on the circuit board to surround the plurality of LED chips, reflecting light from the LED chips. The module further includes a heat sink plate underlying the circuit board to radiate heat generated from the LED chip.
1. A light emitting diode module for a line light source, comprising:
a circuit board with a wire pattern formed thereon;
a plurality of light emitting diode chips directly mounted on the circuit board and electrically connected to the wire pattern, the light emitting diode chips disposed in a longitudinal direction of the circuit board to form the line light source;
a reflecting wall disposed on an upper surface of the circuit board in direct contact with the upper surface of the circuit board to completely surround an outline of the line light source comprising the plurality of light emitting diode chips, the reflecting wall for reflecting light from the plurality of light emitting diode chips in the line light source; and
a heat sink plate underlying the circuit board to radiate heat generated from the light emitting diode chips,
wherein the circuit board comprises a ceramic circuit board, and vias perforated through the circuit board under the light emitting diode chips, respectively, to assist radiation of heat generated from the light emitting diode chips to the heat sink plate,
the reflecting wall comprises a non-conductive wall structure having a highly reflective metal layer coated on an inner side thereof adjacent to the light emitting diode chips, and
the non-conductive wall structure comprises a ceramic material that is integral with the circuit board.
2. The light emitting diode module according to claim 1 , wherein each of the light emitting diode chips comprises a material selected from the group consisting of GaN-based, GaAs-based, GaP-based, InGaN-based, InAlGaN-based, InGaP-based, and InGaAsP-based semiconductors.
3. The light emitting diode module according to claim 1 , wherein the highly reflective metal layer comprises at least one selected from the group consisting of Ag, Al, Rh, Ni, Cu, W, Ti and alloys thereof.
4. The light emitting diode module according to claim 1 , wherein the heat sink plate comprises one selected from the group consisting of Al, Ni, Cu, W, Ti, and alloys of at least two thereof.
5. The light emitting diode module according to claim 1 , further comprising a resin encapsulant with a hemispheric upper surface for sealing each of the light emitting diode chips.
6. The light emitting diode module according to claim 1 , wherein the light emitting diode chips comprise a combination of blue, red and green light emitting diode chips.
7. The light emitting diode module according to claim 1 , wherein the light emitting diode module is used as a light source for an edge type back light unit.