Group III-nitride light emitting device
View Patent ↗The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO 2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.
1. A group III-nitride light emitting device comprising:
an n-type clad layer;
an active layer formed on the n-type clad layer;
a p-type clad layer formed on the active layer; and
a p-electrode having a CuInO 2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer, wherein the p-electrode further comprises a Pt layer formed on the reflective metal layer.
2. A group III-nitride light emitting device comprising:
an n-type clad layer;
an active layer formed on the n-type clad layer;
a p-type clad layer formed on the active layer; and
a p-electrode having a CuIn 2 , layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer, wherein the p-electrode further comprises a Pt/Ni layer formed on the reflective metal layer.
3. A group III-nitride light emitting device comprising:
an n-type clad layer;
an active layer formed on the n-type clad layer;
a p-type clad layer formed on the active layer;
a p-electrode having a CuInG, layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer; and
an undoped GaN layer formed underneath the n-type clad layer,
wherein the n-typed clad layer comprises an n-doped GaN layer and an n-doped AlGaN layer formed on the n-doped GaN layer.
4. The group III-nitride light emitting device according to claim 1 , wherein the reflective metal layer comprises an Ag layer.
5. The group III-nitride light emitting device according to claim 1 , wherein the reflective metal layer comprises an Al layer.
6. The group III-nitride light emitting device according to claim 1 , wherein the transparent conductive oxide layer is made of at least of one selected from a group consisting of ZnO, AZO, Zn 1−x Al x O, Zn 1−x Mg x O, SnO 2 , RuO 2 , PdO, Bi 2 Ru 2 O 7 , Bi 2 Ir 2 O 7 , and ITO.
7. The group III-nitride light emitting device according to claim 6 , wherein the transparent conductive oxide layer comprises an ITO layer.
8. The group III-nitride light emitting device according to claim 1 , further comprising a sapphire substrate provided under the n-type clad layer.
9. The group III-nitride light emitting device according to claim 1 , further comprising an undoped GaN layer formed underneath the n-type clad layer.