Gallium nitride semiconductor light emitting device and method of manufacturing the same

1. A method of manufacturing a GaN semiconductor light emitting device comprising the steps of:

a) preparing a substrate for growing a GaN semiconductor material;

b) forming an n-type GaN clad layer doped with Al on the substrate;

c) forming an active layer having a quantum well structure on the n-type GaN clad layer; and

d) forming a p-type GaN clad layer on the active layer, the method further comprising the step of:

e) forming a buffer layer on the substrate before the step b);

f) removing a predetermined portion of the active layer and p-type clad layer to expose a predetermined portion of the n-type clad layer;

g) forming a p-metal layer on the p-type clad layer; and

h) forming a p-side bonding electrode and an n-side electrode on the p-metal layer and on the exposed portion of the n-type clad GaN layer, respectively;

wherein in step b) the n-type GaN clad layer is doped with Al in a content of 0.01% to 1%.

2. The method as set forth in claim 1 , wherein the step e) comprises the steps of:

e- 1 ) forming an Al seed layer on the substrate layer; and

e- 2 ) forming a single crystal AlN layer on the Al seed layer.

3. The method as set forth in claim 2 , wherein the step e- 2 ) comprises the step of forming a single crystal AlN layer at a high temperature of 1,000° C.-1,100° C. using an MOCVD (Metal Organic Vapor Deposition) process.

4. The method as set forth in claim 2 , wherein the step e- 2 ) comprises the step of forming a single crystal AlN layer with a thickness of 10 nm-50 nm.

5. The method as set forth in claim 1 , wherein the step e) comprises the step of forming a non-crystalline AlN layer on the substrate or the step of forming a non-crystalline GaN layer on the substrate.

6. The method as set forth in claim 1 , the method further comprising the step of:

f) forming a GaN interlayer on the buffer layer before the step b).

7. The method as set forth in claim 6 , wherein the step f) comprises the step of forming a GaN interlayer with a thickness of 100 nm-1 μm.

8. The method as set forth in claim 6 , the method further comprising the step of:

g) forming an Al-doped GaN layer on the GaN interlayer before the step b).

9. The method as set forth in claim 8 , wherein the step g) comprises the step of forming a GaN layer doped with Al in a content of 0.01%-1%.

10. The method as set forth in claim 8 , wherein the step g) comprises the step of forming a GaN layer with a thickness of 1 μm-4 μm.