Flexible display using semiconductor light-emitting device and method of manufacturing the same
A flexible display using semiconductor light-emitting devices and a method of fabricating the same are provided. The flexible display includes: a flexible pliable substrate; a display unit with semiconductor light-emitting devices arranged in pixels on the pliable substrate and which produces an image; and first and second circuit layers driving the semiconductor light-emitting devices. The flexible display having the above-mentioned configuration provides flexibility and the semiconductor light-emitting devices offer a high emission efficiency and a long lifespan.
1 . A flexible display comprising:
a pliable substrate;
a display unit with semiconductor light-emitting devices arranged in pixels on the pliable substrate and which produces an image; and
first and second circuit layers driving the semiconductor light-emitting devices.
2 . The display of claim 1 , wherein pliable substrate is a thermoplastic polymeric material.
3 . The display of claim 1 , wherein the pliable substrate is selected from the group consisting of a polyimide, polyethersulfone (PES), and polyethylene terephthalate (PET).
4 . The display of claim 1 , further comprising a flexible capping layer that is formed of a light transmissive material on the display unit so as to transmit light emitted by the semiconductor light-emitting devices.
5 . A display as claimed in claim 4 , wherein said capping layer is a thermoplastic polymeric material.
6 . The display of claim 4 , wherein the capping layer is selected from the group consisting of a polyimide, polyethersulfone (PES), and polyethylene terephthalate (PET).
7 . The display of claim 1 , wherein the first circuit layer is disposed between the pliable substrate and the display unit and the second circuit layer is disposed on the display unit.
8 . The display of claim 1 , wherein the first and second circuit layers are sequentially disposed between the pliable substrate and the display unit.
9 . The display of claim 7 , wherein the first and second circuit layers are constructed of metal or a conductive polymeric material.
10 . The display of claim 1 , wherein the first and second circuit layers are constructed of composition of a passive matrix.
11 . The display of claim 1 , wherein the semiconductor light-emitting device includes red, green, and blue light-emitting diodes (LEDs) and the red LED has an Al x Ga y In 1-x-y P (0≦x≦1,0≦y≦1,x+y<1) active layer and the green and blue LEDs have Al x Ga y In 1-y-x N(0≦x≦1,0≦y≦1,x+y≦1) active layers.
12 . The display of claim 1 , wherein a ratio of the area of the semiconductor light-emitting devices to the area of the pliable substrate is in the range of approximately 0.5 to 20%.
13 . The display of claim 1 , further comprising grooves in which the semiconductor light-emitting devices are seated.
14 . A method of fabricating a flexible display, comprising:
forming a substrate of a pliable material;
depositing a first circuit layer on the pliable substrate; and
arranging semiconductor light-emitting devices in pixels on the first circuit layer;
forming a display unit by melting and attaching the semiconductor light-emitting devices to the first circuit layer; and
depositing a second circuit layer on the display unit.
15 . The method of claim 14 , wherein the pliable substrate is a thermoplastic polymeric material.
16 . The method of claim 14 , wherein the pliable substrate is selected from the group consisting of a polyimide, polylethersulfone (PES), and, polyethylene terephthalate (PET).
17 . The method of claim 14 , further comprising forming a flexible capping layer of a light transmissive material on the display unit so as to transmit light emitted by the semiconductor light-emitting devices.
18 . The method of claim 17 , wherein the capping layer is a thermoplastic polymeric material.
19 . The method of claim 17 , wherein the capping layer is selected from the group consisting of a polyimide, polyethersulfone (PES), and polyethylene terephthalate (PET).
20 . The method of claim 14 , wherein the first and second circuit layers are constructed of metal or conductive polymeric material.
21 . The method of claim 14 , wherein the first and second circuit layers are constructed of composition of a passive matrix.
22 . The method of claim 14 , wherein the semiconductor light-emitting device includes red, green, and blue light-emitting diodes (LEDs) and the red LED has an Al x Ga y In 1-x-y P (0≦x≦1,0≦y≦1,x+y<1) active layer and the green and blue LEDs have Al x Ga y In 1-x-y N(0≦x≦1,0≦y≦1,x+y≦1) active layers.
23 . The method of claim 14 , wherein the arranging of the semiconductor light-emitting devices comprises:
disposing a metal mask over the first circuit layer, the metal mask having a hole pattern corresponding to the locations of the semiconductor light-emitting devices to be arranged; and
mounting the semiconductor light-emitting devices through the metal mask.
24 . The method of claim 14 , wherein the arranging of the semiconductor light-emitting devices comprises:
preparing a magnet array which is arranged in a pattern corresponding to the locations of the semiconductor light-emitting devices to be arranged below the pliable substrate; and
dispersing the semiconductor light-emitting devices over the pliable substrate on which the first circuit layer has been formed, and mounting the semiconductor light-emitting devices according to the magnet array.
25 . The method of claim 14 , wherein the arranging of the semiconductor light-emitting devices is performed using a transfer method.
26 . The method of claim 23 , wherein the arranging of the semiconductor light-emitting devices is performed using a pick and drop technique.
27 . The method of claim 14 , further comprising forming grooves for mounting the semiconductor light-emitting devices in the pliable substrate.