Semiconductor light emitting device
View Patent ↗There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.
1. A semiconductor light emitting device comprising:
a substrate;
a light emitting structure having a first n-type semiconductor layer, a second n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated;
an n-type electrode formed on an exposed upper portion of the second n-type semiconductor layer and a p-type electrode formed on the p-type semiconductor layer; and
a metal layer formed between the first n-type semiconductor layer and the second n-type semiconductor layer;
wherein the metal layer is extended to the exposed upper portion of the second n-type semiconductor layer and directly contacts the n-type electrode.
2. The semiconductor light emitting device of claim 1 , wherein the substrate comprises sapphire or spinel.
3. The semiconductor light emitting device of claim 1 , wherein the substrate comprises any one of SiC, Si, ZnO, GaAs, an GaN.
4. The semiconductor light emitting device of claim 1 , wherein the metal layer is in contact with the active layer.
5. The semiconductor light emitting device of claim 1 , wherein the metal layer comprises a pattern.
6. The semiconductor light emitting device of claim 5 , wherein the pattern is a striped pattern or a mesh pattern.
7. The semiconductor light emitting device of claim 1 , wherein the metal layer comprises a metal having a higher melting point than a growth temperature of a semiconductor forming the n-type semiconductor layer.
8. The semiconductor light emitting device of claim 7 , wherein the semiconductor is GaN, and the metal has a melting point of 1000° C. or higher.
9. The semiconductor light emitting device of claim 7 , wherein the metal includes at least one of Mo, Nb, Os, Re, Pd, W, Ta, Cr, Hf, Rh, and Zr.
10. The semiconductor light emitting device of claim 1 , wherein the metal layer has a multilayer structure.
11. The semiconductor light emitting device of claim 10 , wherein the metal layer has the multilayer structure including at least one layer formed of Cr.
12. The semiconductor light emitting device of claim 10 , wherein the metal layer has the multilayer including at least one layer formed of at least one of Mo, Nb, Os, Re, Pd, W, Ta, Cr, Hf, Rh, and Zr.
13. The semiconductor light emitting device of claim 10 , wherein at least one layer, located closest to the active layer, of the metal layer having the multilayer structure is formed of Rh.
14. The semiconductor light emitting device of claim 10 , wherein the metal layer having the multilayer structure comprises a first layer formed of Cr, a second layer formed of at least one of Mo, Nb, Os, Re, Pd, W, Ta, Cr, Hf, Rh, and Zr, and a third layer formed of Rh, the first, second, and third layers sequentially laminated.
15. The semiconductor light emitting device of claim 1 , further comprising a buffer layer between the substrate and the n-type semiconductor layer.