Vertical type nitride semiconductor light emitting diode
View Patent ↗Disclosed herein is a vertical type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises an n-type nitride semiconductor layer, an active layer formed under the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed under the active layer, and an n-side electrode which comprises a bonding pad formed adjacent to an edge of an upper surface of the n-type nitride semiconductor layer and at least one extended electrode formed in a band from the bonding pad. The bonding pad of the n-side electrode is formed adjacent to the edge of the upper surface of the n-type nitride semiconductor layer acting as a light emitting surface, thereby preventing a wire from shielding light emitted from the active layer. The extended electrode can be formed in various shapes, and prevents concentration of current density, thereby ensuring effective distribution of the current density.
1. A vertical type nitride semiconductor light emitting diode, comprising:
an n-type nitride semiconductor layer having an upper surface and a lower surface located opposite the upper surface;
an active layer formed on the lower surface of the n-type nitride semiconductor layer;
a p-type nitride semiconductor layer formed under the active layer; and
an n-side electrode formed on the upper surface of the n-type nitride semiconductor layer,
wherein the n-side electrode has a bonding pad formed adjacent to an edge of the upper surface of the n-type nitride semiconductor layer and at least one extended electrode formed in a band from the bonding pad.
2. The light emitting diode as set forth in claim 1 , further comprising:
a buffer layer formed between the n-type nitride semiconductor layer and the n-side electrode.
3. The light emitting diode as set forth in claim 1 , further comprising:
a transparent electrode layer formed between the n-type nitride semiconductor layer and the n-side electrode.
4. The light emitting diode as set forth in claim 3 , wherein the transparent electrode layer has at least one layer composed of an oxide selected from the group consisting of indium tin-based oxide (ITO), indium oxide (IO), tin based oxide (SnO 2 ), zinc-based oxide (ZnO), and indium zinc-based oxide (IZO).
5. The light emitting diode as set forth in claim 1 , further comprising:
a conductive supporting substrate formed under the p-type nitride semiconductor layer.
6. The light emitting diode as set forth in claim 5 , further comprising:
a conductive bonding layer between the conductive supporting substrate and the p-type nitride semiconductor layer.
7. The light emitting diode as set forth in claim 1 , further comprising:
a highly reflective ohmic contact layer formed under the p-type nitride semiconductor layer.
8. The light emitting diode as set forth in claim 7 , wherein the highly reflective ohmic contact layer has at least one layer composed of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and combinations thereof.
9. The light emitting diode as set forth in claim 1 , wherein the n-type nitride semiconductor layer has a substantially rectangular-shaped upper surface,
wherein the bonding pad of the n-side electrode has a bonding pad formed adjacent to one corner of the upper surface of the n-type nitride semiconductor layer, and
wherein the at least one extended electrode has a first extended electrode formed from the bonding pad adjacent to the corner along four sides of the upper surface of the n-type nitride semiconductor layer.
10. The light emitting diode as set forth in claim 9 , wherein the n-side electrode further comprises;
a plurality of second extended electrodes formed from a portion of the first extended electrode formed along one side of the upper surface of the n-type nitride semiconductor layer to another portion of the first extended electrode formed along another side of the upper surface opposite to the one side of the upper surface of the n-type nitride semiconductor layer.
11. The light emitting diode as set forth in claim 1 , wherein the n-type nitride semiconductor layer has a substantially rectangular-shaped upper surface,
wherein the bonding pad of the n-side electrode has a bonding pad formed adjacent to one corner of the upper surface of the n-type nitride semiconductor layer, and
wherein the at least one extended electrode of the n-side electrode comprises first and second extended electrodes formed from the bonding pad adjacent to the corner along both sides of the upper surface of the n-type nitride semiconductor layer constituting the corner where the bonding pad is formed, and a third extended electrode diagonally formed from the bonding pad of the corner.
12. The light emitting diode as set forth in claim 1 , wherein the n-type nitride semiconductor layer has a substantially rectangular-shaped upper surface,
wherein the bonding pad of the n-side electrode has a bonding pad formed adjacent to one corner of the upper surface of the n-type nitride semiconductor layer, and
wherein the at least one extended electrode of the n-side electrode has a first extended electrode formed from the bonding pad of the corner to a position adjacent to another corner opposite to the corner where the bonding pad is formed, and second and third extended electrodes formed from the first extended electrode along both sides of the upper surface of the n-type nitride semiconductor layer constituting the other corner opposite to the corner where the bonding pad is formed.
13. The light emitting diode as set forth in claim 1 , wherein the n-type nitride semiconductor layer has a substantially rectangular-shaped upper surface,
wherein the bonding pad of the n-side electrode has a bonding pad formed adjacent to the central region of one side of the upper surface of the n-type nitride semiconductor layer, and
wherein the at least one extended electrode of the n-side electrode has an extended electrode formed from the bonding pad adjacent to the substantially center of one side along four sides of the upper surface of the n-type nitride semiconductor layer.
14. The light emitting diode as set forth in claim 1 , wherein the n-type nitride semiconductor layer has a substantially rectangular-shaped upper surface,
wherein the bonding pad of the n-side electrode has a bonding pad formed adjacent to the central region of one side of the upper surface of the n-type nitride semiconductor layer, and
wherein the at least one extended electrode of the n-side electrode comprises first and second extended electrodes formed from the bonding pad along the one side of the upper surface of the n-type nitride semiconductor layer where the bonding pad is adjacently formed, a third extended electrode formed from the bonding pad to a position adjacent to another side opposite to the one side of the upper surface of the n-type nitride semiconductor layer where the bonding pad is adjacently formed, and a fourth extended electrode formed from the third extended electrode along the other side opposite to the one side of the upper surface of the n-type nitride semiconductor layer where the bonding pad is adjacently formed.
15. The light emitting diode as set forth in claim 1 , wherein the n-type nitride semiconductor layer has a substantially rectangular-shaped upper surface,
wherein the bonding pad of the n-side electrode of the n-side electrode has a bonding pad formed adjacent to the central region of one side of the upper surface of the n-type nitride semiconductor layer, and
wherein the at least one extended electrode has a first extended electrode formed from the bonding pad to a position adjacent to another side opposite to the one side of the upper surface of the n-type nitride semiconductor layer where the bonding pad is adjacently formed, and a second extended electrode formed from the first extended electrode along three sides except for the one side of the upper surface of the n-type nitride semiconductor layer where the bonding pad is adjacently formed.