High power semiconductor laser device
View Patent ↗In a high power semiconductor laser device, first and second conductivity type clad layers are provided. An active layer is interposed between the first and second conductivity type clad layers. A first optical guide layer is disposed between the first conductivity type clad layer and the active layer. A second optical guide layer is disposed between the second conductivity clad layer and the active layer. Also, an intentionally undoes optical loss confinement region is formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.
1. A semiconductor laser device comprising:
first and second conductivity type clad layers;
an active layer interposed between the first and second conductivity type clad layers;
a first optical guide layer disposed between the first conductivity type clad layer and the active layer;
a second optical guide layer disposed between the second conductivity clad layer and the active layer; and
an intentionally undoped optical loss confinement region formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.
2. The semiconductor laser device according to claim 1 , wherein the optical loss confinement region is adjacent to the first or second optical guide layer.
3. The semiconductor laser device according to claim 1 , wherein the optical loss confinement region is formed in both the first and second conductivity type clad layers.
4. The semiconductor laser device according to claim 1 , wherein the optical loss confinement region, the active layer and the first and second optical guide layers have a thickness that occupies at least 80% of the laser beam distribution.
5. The semiconductor laser device according to claim 4 , wherein the optical loss confinement region, the active layer and the first and second optical guide layers have a thickness that occupies at least 90% of the laser beam distribution.
6. The semiconductor laser device according to claim 4 , wherein the optical loss confinement region has a thickness of about 10 nm to about 300 μm.
7. The semiconductor laser device according to claim 1 , wherein the optical loss confinement region has a doping concentration of 5×10 16 /cm 3 or less.