Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method
View Patent ↗The invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light emitting device using the same. In growing the nitride single crystal according to one aspect of the invention, first, a silicon substrate having a surface in (111) crystal orientation is prepared. A first nitride buffer layer is formed on the surface of the silicon substrate. Then, an amorphous oxide film is disposed on the first nitride buffer layer. A second buffer layer is disposed on the amorphous oxide film. Thereafter, the nitride single crystal is formed on the second nitride buffer layer.
1. A method for growing a nitride single crystal comprising steps of:
preparing a silicon substrate having a surface in (111) crystal orientation;
forming a first nitride buffer layer on the surface of the silicon substrate;
forming an amorphous oxide film on the first nitride buffer layer;
forming a second nitride buffer layer on the amorphous oxide film; and
forming the nitride single crystal on the second nitride buffer layer,
wherein the amorphous oxide film is an Al 2 O 3 amorphous film and the first buffer layer comprises AlN.
2. The method according to claim 1 , wherein the amorphous oxide film has a thickness of about 5 nm to 30 nm.
3. The method according to claim 1 , wherein the second nitride buffer layer has a composition expressed by Al x In y Ga (1-x-y) N, where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1.
4. The method according to claim 1 , wherein the second buffer layers comprises AlN.
5. The method according to claim 1 , wherein the first and second nitride buffer layers have an identical composition.
6. The method according to claim 1 , wherein the first nitride buffer layer has a thickness of at least 10 nm.
7. The method according to claim 1 , wherein the second nitride buffer layer has a thickness of about 30 nm to 200 nm.
8. The method according to claim 1 , wherein the nitride single crystal forming step is carried out via HVPE.
9. A nitride semiconductor light emitting device comprising:
a silicon substrate having a surface in (111) crystal orientation;
a first nitride buffer layer formed on the surface of the silicon substrate;
an amorphous oxide film formed on the first nitride buffer layer;
a second nitride buffer layer formed on the amorphous oxide film;
a first conductivity-type nitride semiconductor layer formed on the second nitride buffer layer;
an active layer formed on the first conductivity-type nitride semiconductor layer; and
a second conductivity-type nitride semiconductor layer formed on the active layer,
wherein the amorphous oxide film is an Al 2 O 3 amorphous film and the first buffer layer comprises AlN.
10. The nitride semiconductor light emitting device according to claim 9 , wherein the amorphous oxide film is patterned such that the first buffer layer directly contacts the second nitride buffer layer in a partial area of the amorphous oxide film.
11. The nitride semiconductor light emitting device according to claim 9 , wherein the amorphous oxide film has a thickness of about 5 nm to 30 nm.
12. The nitride semiconductor light emitting device according to claim 9 , wherein the second nitride buffer layers has a composition expressed by Al x In y Ga (1-x-y) N, where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1.
13. The nitride semiconductor light emitting device according to claim 9 , wherein the second nitride buffer layers comprises AlN.
14. The nitride semiconductor light emitting device according to claim 9 , wherein the first nitride buffer layer has a thickness of at least 10 nm.
15. The nitride semiconductor light emitting device according to claim 9 , wherein the second nitride buffer layer has a thickness of about 30 nm to 200 nm.
16. A method for manufacturing a nitride semiconductor light emitting device comprising steps of:
preparing a silicon substrate having a surface in (111) crystal orientation;
forming a first nitride buffer layer on the surface of the silicon substrate;
forming an amorphous oxide film on the first nitride buffer layer;
forming a second nitride buffer layer on the amorphous oxide film;
forming a first conductivity-type nitride semiconductor layer on the second nitride buffer layer;
forming an active layer on the first conductivity-type nitride semiconductor layer; and
forming a second conductivity-type nitride semiconductor layer on the active layers,
wherein the amorphous oxide film is an Al 2 O 3 amorphous film and the first buffer layer comprises AlN.
17. The method according to claim 16 , wherein the amorphous oxide film is patterned such that the first buffer layer directly contacts the second buffer layer in a partial area of the amorphous oxide film.
18. The method according to claim 16 , wherein the amorphous oxide film has a thickness of about 5 nm to 30 nm.
19. The method according to claim 16 , wherein the first nitride buffer layer has a thickness of at least 10 nm.
20. The method according to claim 16 , wherein the second nitride buffer layer has a thickness of about 30 nm to 200 nm.