Patent Assignment
Reel/Frame 019643/0279
Assignment of Assignor's Interest
Recorded: 2007-07-19
Pages: 2
Assignors
PARK, HEE SEOK
Executed: 2007-06-11
VASILIEVICH, ZHILYAEV YURI
Executed: 2007-06-08
NIKOLAEVICH, BESSOLOV VASILIY
Executed: 2007-06-08
Assignees
SAMSUNG ELECTRO-MECHANICS CO., LTD.
314, MAETAN3-DONG, YEONGTONG-GU, SUWON, GYUNGGI-DO, KOREA, REPUBLIC OF
IOFFE PHYSICO-TECHNICAL INSTITUTE RAS
26 POLYTEKHNICHESKAYA STR., SAINT-PETERSBURG 194021, RUSSIAN FEDERATION
Covered Property
(1)
Method of Growing a Nitride Single Crystal on Silicon Wafer, Nitride Semiconductor Light Emitting Diode Manufactured Using the Same and the Manufacturing Method
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.