Nitride semiconductor light-emitting device and process for producing the same
View Patent ↗Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.
1. A nitride semiconductor light-emitting device, comprising:
a polycrystalline substrate made of AlN;
a buffer layer formed on the AlN substrate;
a plurality of dielectric patterns partially covering the buffer layer and having a stripe or lattice structure;
a lateral epitaxially overgrown-nitride semiconductor layer which extends between the dielectric patterns and is in direct contact with both the buffer layer and the dielectric patterns;
a first conductive nitride semiconductor layer on the nitride semiconductor layer;
an active layer on the first conductive nitride semiconductor layer; and
a second conductive nitride semiconductor layer formed on the active layer,
wherein the AlN polycrystalline substrate has an upper surface having irregularities in a predetermined crystal face direction formed thereon, and
wherein the substrate comprises a (Galn)AlN substrate.