Chemical vapor deposition apparatus
View Patent ↗There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas.
1. A chemical vapor deposition apparatus comprising:
a chamber having a substantially cylindrical shape;
a reactor provided in the chamber to have a deposition object deposited therein;
a reservoir storing a reaction gas fed from the outside to introduce the reaction gas into the reactor;
a compartment member defining the reactor, compartmenting the reservoir from the reactor and introducing the reaction gas stored in the reservoir into the reactor,
wherein:
the reservoir is defined by the chamber and the compartment member,
the reservoir is formed around a side portion of the chamber such that a center of the reactor is eccentric from a center of the chamber, and the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas by the compartment member is eccentric from a center of the chamber, and
the compartment member comprises a plate having a substantially ring shape configured to compartment the reactor from the reservoir.
2. The chemical vapor deposition apparatus of claim 1 , wherein the reservoir comprises:
a bigger flow path formed in an area where the reaction gas is introduced;
a smaller flow path formed opposite to the bigger flow path to have a relatively smaller width; and
a reduction flow path having a width gradually reduced from the bigger flow path toward the smaller flow path.
3. The chemical vapor deposition apparatus of claim 1 , wherein the reservoir comprises:
a bigger flow path formed in an area where the reaction gas is introduced;
a smaller flow path formed opposite to the bigger flow path to have a relatively smaller width; and
an expansion flow path having a width gradually expanded from the smaller flow path toward the bigger flow path.
4. The chemical vapor deposition apparatus of claim 1 ,
wherein the compartment member comprises a porous member generating flow resistance of the reaction gas stored in the reservoir and supplied to the reactor.
5. The chemical vapor deposition apparatus of claim 1 , the compartment member comprises:
a plurality of communication holes formed in the plate to keep the reservoir in communication with the reactor.
6. The chemical vapor deposition apparatus of claim 1 ,
further comprising a wall protruded upward from a bottom of the reservoir where the reaction gas is introduced to diffuse the reaction gas.
7. The chemical vapor deposition apparatus of claim 1 ,
further comprising a guiding wall protruded upward from a bottom of the reservoir where the reaction gas is introduced, the guiding wall inclined in a flow direction at a predetermined angle to guide the reaction gas.
8. The chemical vapor deposition apparatus of claim 1 ,
wherein the reservoir comprises a plurality of sub-reservoirs storing gases different in kind from one another.
9. The chemical vapor deposition apparatus of claim 8 , further comprising a screen provided in the reservoir to compartment the plurality of sub-reservoirs from one another.
10. The chemical vapor deposition apparatus of claim 8 ,
further comprising a sub-intake part connected to the plurality of sub-reservoirs, respectively to allow the different kinds of gases to be introduced into the sub-reservoir.
11. The chemical vapor deposition apparatus of claim 10 ,
further comprising a guiding part provided in at least one of the sub-reservoirs to guide the gas fed through the sub-intake part.
12. The chemical vapor deposition apparatus of claim 11 ,
wherein at least one of the plurality of sub-intake parts is disposed substantially vertically,
the guiding part comprises a curved guiding part formed in a curve to guide the gas fed vertically in a horizontal direction.
13. The chemical vapor deposition apparatus of claim 11 ,
wherein at least one of the plurality of sub-intake parts is disposed substantially vertically,
the guiding part comprises an inclined guiding part inclined at a predetermined angle to guide the gas fed vertically in a substantially horizontal direction.
14. The chemical vapor deposition apparatus of claim 10 ,
further comprising a wall provided in at least one of the plurality of sub-reservoirs to diffuse the gas fed through the sub-intake part.
15. The chemical vapor deposition apparatus of claim 1 , wherein the compartment member comprises a plurality of slits formed in the plate to keep the reservoir in communication with the reactor.