Method for manufacturing a GaN based optical device
View Patent ↗The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH 3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.
1. A method for manufacturing a GaN based optical device, the method comprising the steps of:
growing a p-type nitride semiconductor layer using NH 3 and a hydrazine based source as a nitrogen precursor; and
doping the p-type nitride semiconductor layer with magnesium (Mg),
wherein the p-type nitride semiconductor layer includes gallium and the molar flow ratio of hydrazine based source and gallium (Ga)(V(hydrazine based source) /III(gallium)) is in a range of 1 to 300;
the p-type nitride semiconductor layer includes gallium and the molar flow ratio of NH 3 and gallium (Ga) (V(ammonia) /III(gallium)) is in a range of 100 to 8000;
the p-type nitride semiconductor layer is grown at a temperature of 700° C. to 1100° C. and at a pressure of 20 torr to 760 torr;
the p-type nitride semiconductor layer has a thickness of 10 Å to 10000 Å; and
the p-type nitride semiconductor layer exists on an active layer that generates light by recombining holes and electrons.
2. The method for manufacturing a GaN based optical device of claim 1 , wherein when the hydrazine based source is thermally decomposed, the hydrazine based source generates a radical capable of combining with a hydrogen radical.
3. The method for manufacturing a GaN based optical device of claim 2 , wherein the p-type nitride semiconductor layer is grown by eliminating hydrogen radicals separated from NH 3 through combination with the radical generated from the hydrazine based source.
4. The method for manufacturing a GaN based optical device of claim 2 , wherein the radical includes least one of CH 3 and NH 2 .
5. The method for manufacturing a GaN based optical device of claim 1 , wherein the hydrazine based source is selected from at least one of a group consisting of monomethylhydrazine, dimethylhydrazine and tertiarybutylhydrazine.
6. The method for manufacturing a GaN based optical device of claim 1 , wherein the nitrogen precursor is carried by a carrier gas and the carrier gas includes at least one of nitrogen and hydrogen.