Nitride-based semiconductor light-emitting device and method of manufacturing the same

1. A method of manufacturing a nitride-based semiconductor light-emitting device, comprising:

sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate;

forming a plurality of masking dots on an upper surface of the p-clad layer;

forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots;

forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer;

forming an n-electrode on the rough n-contact surface; and

forming a p-electrode on the p-contact layer.

2. The method of claim 1 , wherein the masking dots are formed of Si x N y .

3. The method of claim 2 , wherein the masking dots are formed using organic metal chemical vapor deposition process or a molecular beam epitaxy process.

4. The method of claim 3 , wherein the masking dots may be formed by supplying a Si vapor source and an N vapor source and chemically reacting the Si vapor source and the N vapor source.

5. The method of claim 4 , wherein the Si vapor source comprises at least one material out of SiH 4 , Si 2 H 6 , ditertiarybutyl silane(DTBSi), and tetraethyl silane(TESi).

6. The method of claim 4 , wherein the N vapor source comprises NH 3 .

7. The method of claim 1 , wherein the p-contact layer is formed of substantially the same material as a material used to form the p-clad layer.

8. The method of claim 1 , wherein the depth of the rough surface of the p-contact layer is equal to or greater than approximately 10 nm.

9. The method of claim 1 , wherein the p-electrode comprises at least one of a transparent electrode and a reflective electrode.

10. A nitride-based semiconductor light-emitting device manufactured using the method of claim 1 .

11. A nitride-based semiconductor light-emitting device comprising

a n-clad layer having a stepped portion formed by etching a predetermined portion of the upper surface of the n-clad layer, wherein the stepped portion has a rough n-contact upper surface;

an active layer formed on the upper surface of the n-clad layer;

a p-clad layer formed on the active layer;

a plurality of masking dots formed on the upper surface of the p-clad layer;

a p-contact layer formed on portions of the p-clad layer between the masking dots not to be located on the masking dots, whereby the p-contact layer has a rough structure;

a n-electrode formed on the rough n-contact surface; and

a p-electrode formed on the p-contact layer.

12. The nitride-based semiconductor light-emitting device of claim 11 , wherein the masking dots are formed of SiN.

13. The nitride-based semiconductor light-emitting device of claim 11 , wherein the p-contact layer is formed of substantially the same material as a material used to form the p-clad layer.

14. The nitride-based semiconductor light-emitting device of claim 11 , wherein the depth of the rough surface of the p-contact layer is equal to or greater than approximately 10 nm.

15. The nitride-based semiconductor light-emitting device of claim 11 , wherein the p-electrode comprises at least one of a transparent electrode and a reflective electrode.