Light emitting diode and method for manufacturing the same
View Patent ↗A light emitting diode (LED) includes a substrate, a first conductive clad layer formed on the substrate, an active layer formed on the first conductive clad layer, a second conductive clad layer formed on the active layer, an alumina (Al 2 O 3 ) layer formed on the lower surface of the substrate, and an aluminum layer formed on the lower surface of the alumina (Al 2 O 3 ) layer. The substrate may be removed, and the aluminum layer and the alumina layer are formed directly on the lower surface of the first conductive clad layer.
1. A light emitting diode, comprising:
a sapphire substrate;
a first conductive clad layer formed on the substrate;
an active layer formed on the first conductive clad layer;
a second conductive clad layer formed on the active layer;
an alumina (Al 2 O 3 )layer formed on the lower surface of the substrate;
an aluminum layer formed on the lower surface of the alumina (Al 2 O 3 ) layer;
a glass layer formed on the lower surface of the aluminum layer; and
another alumina (Al 2 O 3 ) layer formed between the aluminum layer and the glass layer.
2. The light emitting diode as set forth in claim 1 , wherein the first and second conductive clad layers are made of a semiconductor material of a GaN compound.
3. A light emitting diode, comprising:
a sapphire substrate;
a first conductive clad layer formed on the substrate;
an active layer formed on the first conductive clad layer;
a second conductive clad layer formed on the active layer;
an alumina (Al 2 O 3 ) layer formed on the lower surface of the substrate;
an aluminum layer formed on the lower surface of the alumina (Al 2 O 3 ) layer;
a high reflectivity structure that is formed on the lower surface of the substrate and includes two layers with different reflectivities, thereby exhibitina a blab reflectivity, wherein the two layers of the high reflector structure include said alumina (Al 2 O 3 ) layer formed on the lower surface of the substrate and said aluminum layer formed on the lower surface of the alumina (Al 2 O 3 ) layer;
a glass layer formed on the lower surface of the aluminum layer; and
another alumina (Al 2 O 3 ) layer formed between the aluminum layer and the glass layer.
4. The light emitting diode as set forth in claim 3 , wherein the first and second conductive clad layers are made of a semiconductor material of a GaN compound.
5. A light emitting diode, comprising:
first and second reflective layers having different reflectivities, said second reflective layer being positioned on top of the first reflective layer and defining together with said first reflective layer a reflective structure;
a sapphire substrate positioned on to of the second reflective layer;
a first conductive clad layer positioned on top of the substrate;
an active layer positioned on top of the first conductive clad layer;
a second conductive clad layer positioned on top of the active layer; and
a glass layer;
wherein
the first reflective layer is an aluminum layer and the second reflective layer is an alumina (Al 2 O 3 ) layer positioned on top of the aluminum layer to define said reflective structure; and
said aluminum layer is positioned on top of said glass layer;
said light emitting diode further comprising another alumina (Al 2 O 3 ) layer positioned between the aluminum layer and the glass layer.