Light emitting device and package having the same
View Patent ↗There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.
1. A light emitting device comprising:
a light emitting lamination including first and second conductivity type semiconductor layers and an active layer formed therebetween, and a first surface being an outside surface of the first conductivity type semiconductor layer and a second surface being an outside surface of the second conductivity type semiconductor layer;
at least one insulating barrier unit extending from the second surface of the light emitting lamination to part of the first conductivity type semiconductor layer so as to divide the light emitting lamination into a plurality of light emitting regions;
a first electrode structure connected to the first conductivity type semiconductor layer located at the plurality of light emitting regions;
a second electrode structure formed at the second surface of the light emitting lamination so as to be connected to the second conductivity type semiconductor layer; and
a conductive substrate formed at the second surface of the light emitting lamination so as to be electrically connected to the second electrode structure,
wherein the first electrode structure includes:
a plurality of contact holes with conductive material formed therein respectively provided in the plurality of light emitting regions and extending from the second surface of the light emitting lamination to at least part of the first conductivity type semiconductor layer and the plurality of contact holes with conductive material formed therein are electrically connected to the first conductivity type semiconductor layer and electrically insulated from the second conductivity type semiconductor layer and the active layer,
a bonding unit connected from the first surface of the light emitting lamination to at least one of the plurality of contact holes with conductive material formed therein, and having a bonding region exposed at the first surface,
and a wiring unit formed on the second surface of the light emitting lamination, electrically insulated from at least the second conductivity type semiconductor layer, and electrically connecting one contact hole with conductive material formed therein to another contact hole with conductive material formed therein, both one and another contact holes with conductive material formed therein connected to the bonding unit through the wiring unit.
2. The light emitting device of claim 1 , wherein the barrier unit is filled with air.
3. The light emitting device of claim 1 , wherein the barrier unit has an insulating layer formed at an inner surface thereof.
4. The light emitting device of claim 1 , wherein the barrier unit is filled with an insulating material.
5. The light emitting device of claim 1 , wherein the barrier unit extends from the second surface of the light emitting lamination to the first conductivity type semiconductor layer.
6. The light emitting device of claim 1 , wherein the barrier unit includes a plurality of barriers separated from each other.
7. The light emitting device of claim 1 , wherein the second electrode reflects light generated from the active layer.
8. The light emitting device of claim 7 , wherein the second electrode structure includes one selected from a group consisting of Ag, Al, and Pt.
9. The light emitting device of claim 1 , wherein the conductive substrate includes one selected from a group consisting of Au, Ni, Cu, and W.
10. The light emitting device of claim 1 , wherein the conductive substrate includes one selected from a group consisting of Si, Ge, and GaAs.
11. The light emitting device of claim 1 , wherein the conductive substrate is formed by using a plating method.
12. The light emitting device of claim 1 , wherein the conductive substrate is formed by using a substrate bonding method.
13. The light emitting device of claim 1 , wherein the bonding unit has a smaller cross-sectional area in the active layer than in a surface of the first conductivity type semiconductor layer.
14. The light emitting device of claim 1 , wherein the contact holes are separated from the bonding unit by a predetermined distance.
15. The light emitting device of claim 1 , wherein a cross-sectional area of each contact hole in the active layer is smaller than that of the bonding unit in the first conductivity type semiconductor layer.
16. A light emitting device package comprising:
a light emitting device package body having a recessed part at an upper surface thereof;
a first lead frame mounted to the package body and exposed at a lower surface of the recessed part;
a second lead frame mounted to the package body; and
a light emitting device mounted to the first lead frame, wherein the light emitting device comprises a light emitting lamination including first and second conductivity type semiconductor layers and an active layer formed therebetween, and a first surface being an outside surface of the first conductivity type semiconductor layer and a second surface being an outside surface of the second conductivity type semiconductor layer;
at least one insulating barrier unit extending from the second surface of the light emitting lamination to part of the first conductivity type semiconductor layer so as to divide the light emitting lamination into a plurality of light emitting regions;
a first electrode structure connected to the first conductivity type semiconductor layer located at the plurality of light emitting regions; a second electrode structure formed at the second surface of the light emitting lamination so as to be connected to the second conductivity type semiconductor layer; and
a conductive substrate formed at the second surface of the light emitting lamination so as to be electrically connected to the second electrode structure, and
the first electrode structure includes:
a plurality of contact holes with conductive material formed therein respectively provided in the plurality of light emitting regions and extending from the second surface of the light emitting lamination to at least part of the first conductivity type semiconductor layer so that the plurality of contact holes with conductive material formed therein are electrically connected to the first conductivity type semiconductor layer and electrically insulated from the second conductivity type semiconductor layer and the active layer,
a bonding unit connected from the first surface of the light emitting lamination to at least one of the plurality of contact holes with conductive material formed therein, and having a bonding region exposed at the first surface, and
a wiring unit formed on the second surface of the light emitting lamination, electrically insulated from at least the second conductivity type semiconductor layer, and electrically connecting one contact hole with conductive material formed therein to another contact hole with conductive material formed therein, both one and another contact holes with conductive material formed therein connected to the bonding unit through the wiring unit.