Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device
View Patent ↗Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric pressure while controlling a temperature of the substrate within a range from 850 to 950 degrees Celsius, and then, GaN-based compound, such as GaN, AlGaN or the like, is epitaxially grown on the buffer layer at a high temperature. The group III-nitride semiconductor light emitting device is fabricated by using the group III-nitride semiconductor thin film as a base layer.
1. A group III-nitride semiconductor thin film comprising:
a (1-102)-plane sapphire substrate;
a buffer layer located on the sapphire substrate and made of group III-nitride;
an intermediate layer located on the buffer layer and formed by stacking two or more group III-nitride layers one above another, each group III-nitride layer formed by nitriding a group III-metal atomic layer; and
an epitaxial growth layer located on the intermediate layer and made of group III-nitride,
wherein group III-nitride layers include first and second group III-nitride layers sequentially stacked, the group III-metal atomic layers of which are made of different metals selected from the group consisting of Ga, Al and In.
2. A group III-nitride semiconductor thin film comprising:
a (1-102)-plane sapphire substrate;
an intermediate layer located on the sapphire substrate and formed by stacking two or more group III-nitride layers one above another, each multi-level group III-nitride layer formed by nitriding a group III-metal atomic layer; and
an epitaxial growth layer located on the intermediate layer and made of group III-nitride,
wherein the group III-nitride layers include first and second group III-nitride layers sequentially stacked, the group III-metal atomic layers of which are made of different metals selected from the group consisting of Ga, Al and In.
3. The group III-nitride semiconductor thin film according to claim 1 or 2 , wherein the group III-nitride layers further include a third group III-nitride layer and the group III-metal atomic layer of the third group III-nitride layer is made of different metal from the first and second multi-level layers.
4. The group III-nitride semiconductor thin film according to claim 3 , wherein the epitaxial growth layer is made of GaN.
5. The group III-nitride semiconductor thin film according to claim 3 , wherein the epitaxial growth layer is made of AlGaN.
6. A group III-nitride semiconductor light emitting device including a group III-nitride semiconductor thin film according to claim 1 or 2 .