Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor
View Patent ↗There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
1. A surface treatment method of a group III nitride semiconductor comprising:
providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity;
forming a crystal damage layer having a defect caused by nitrogen vacancies along the second surface; and
irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
2. The surface treatment method of claim 1 , wherein the forming a crystal damage layer comprises performing plasma treatment or ion beam irradiation on the second surface.
3. The surface treatment method of claim 1 , wherein the crystal damage layer comprises at least one of an amorphous area, a poly-crystal area and a group III-rich area.
4. The surface treatment method of claim 1 , wherein the crystal damage layer has a thickness of 5 to 2000 nm.
5. The surface treatment method of claim 1 , wherein the group III nitride semiconductor is a semiconductor represented by Al x In y Ga (1−x−y) N, where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.
6. The surface treatment method of claim 1 , wherein the group III nitride semiconductor is a GaN semiconductor, and
the group III polarity is a gallium polarity.
7. A method of manufacturing a group III nitride semiconductor, the method comprising:
growing a group III nitride semiconductor on a nitride single crystal growth substrate, wherein the group III nitride semiconductor includes a first surface having a group III polarity and a second surface opposing the first surface, the second surface in contact with the substrate and having a nitrogen polarity;
separating the group III nitride semiconductor from the nitride single crystal growth substrate;
forming a crystal damage layer having a defect caused by nitrogen vacancies along the second surface; and
irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to a group III polarity.
8. The method of claim 7 , wherein the forming a crystal damage layer comprises performing plasma treatment or ion beam irradiation onto the second surface.
9. The method of claim 7 , wherein the crystal damage layer comprises at least one of an amorphous area, a poly-crystal area and a group III-rich area.
10. The method of claim 7 , wherein the crystal damage layer has a thickness of 5 to 2000 nm.
11. The method of claim 7 , wherein the group III nitride semiconductor is a semiconductor represented by Al x In y Ga (1−x−y) N, where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.
12. The method of claim 7 , wherein the group III nitride semiconductor is a GaN semiconductor, and
the group III polarity is a gallium polarity.
13. The method of claim 7 , further comprising growing an additional nitride semiconductor layer on the second surface changed to have the group III polarity.
14. The method of claim 7 , wherein the nitride single crystal growth substrate is formed of a material selected from a group consisting of sapphire, SiC, Si, ZnO, MgAl 2 O 4 , MgO, LiAlO 2 and LiGaO 2 .