Nitride semiconductor light-emitting device having high light efficiency and method of manfacturing the same
View Patent ↗Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.
1. A method of manufacturing a semiconductor light emitting diode, comprising operations of:
sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate;
in-situ depositing a mask layer on a region of a surface of the second semiconductor layer;
selectively growing a third semiconductor layer in a textured structure on the second semiconductor layer by depositing the same material as that of the second semiconductor layer on the second semiconductor layer and the mask layer; and
forming a transparent electrode on the third semiconductor,
wherein in the in-situ depositing of the mask layer, openings having irregular sizes and periods are formed in the mask layer, without etching,
the first semiconductor layer is formed of an n-type semiconductor material and the second semiconductor layer is formed of a p-type semiconductor material,
the third semiconductor layer in the textured structure is formed through the openings,
the transparent electrode is formed to have a textured structure having a shape which corresponds to that of the textured structure of the third semiconductor layer, and
light generated by the active layer is extracted to the outside through the transparent electrode.
2. The method of claim 1 , wherein the in-situ depositing of a mask layer on a region of the surface of the second semiconductor layer comprises forming the mask layer by adding a silicon (Si) source and a nitrogen (N) source to the second semiconductor layer.
3. The method of claim 2 , wherein the silicon Si source comprises at least one of silicon source selected from the group consisting of triethylsilane (TESi), tributhy silane (TBSi), ditertiarybuthysilane (DTBSI), silane (SiH 4 ) and disilane (Si 2 H 6 ).
4. The method of claim 2 , wherein the nitrogen (N) source is NH 3 .
5. The method of claim 1 , wherein the operations in claim 1 are performed by MOCVD (metalorganic chemical vapor deposition) or MBE (molecular beam epitaxy).