Light emitting device for alternating current source
There is provided a light emitting device that can reduce the size of a light emitting device module by using a more simplified light emitting device that directly uses an alternating current source, prevent a decrease in luminous efficiency that is caused due to the use of a separate driving device, solve a problem with an ohmic contact of a p-type electrode, reduce the number of electrodes, and secure a larger area of light emission. A light emitting device for an alternating current source according to an aspect of the invention includes a first conductive type first semiconductor layer, a first electrode formed on the first conductive type first semiconductor layer and electrically connected to the alternating current source, a second conductive type second semiconductor layer formed on the first conductive type first semiconductor layer, a first conductive type third semiconductor layer formed on the second conductive type second semiconductor layer, and a second electrode formed on the third semiconductor layer and electrically connected to the alternating current source. Here, the light emitting device operates in response to a voltage from the alternating current source through the first electrode and the second electrode.
1 . A light emitting device for an alternating current source that operates upon receiving a voltage from the alternating current source, the device comprising:
a first conductive type first semiconductor layer;
a first electrode formed on the first conductive type first semiconductor layer and electrically connected to the alternating current source;
a second conductive type second semiconductor layer formed on the first conductive type first semiconductor layer;
a first conductive type third semiconductor layer formed on the second conductive type second semiconductor layer; and
a second electrode formed on the third semiconductor layer and electrically connected to the alternating current source,
wherein the light emitting device operates in response to a voltage from the alternating current source through the first electrode and the second electrode.
2 . The light emitting device of claim 1 , wherein the first semiconductor layer and the third semiconductor layer are formed of n-type semiconductors, and the second semiconductor layer is formed of a p-type semiconductor.
3 . The light emitting device of claim 2 , wherein the first electrode is an n-type electrode.
4 . The light emitting device of claim 1 , wherein the first semiconductor layer and the third semiconductor layer are formed of p-type semiconductors, and the second semiconductor is formed of an n-type semiconductor.
5 . The light emitting device of claim 4 , wherein the second electrode is a p-type electrode.
6 . The light emitting device of claim 1 , further comprising:
a first active layer formed on the first semiconductor layer to emit light; and
a second active layer formed on the second semiconductor layer to emit light.
7 . The light emitting device of claim 6 , wherein the first active layer and the second active layer have different energy bandgaps from each other.
8 . The light emitting device of claim 6 , wherein each of the first active layer and the second active layer comprises one or more energy well layers.
9 . The light emitting device of claim 8 , wherein the energy well layer comprises one of a plurality of quantum dots and a plurality of quantum nanorods.
10 . The light emitting device of claim 1 , further comprising: a substrate on which the third semiconductor layer is formed.
11 . The light emitting device of claim 1 , wherein the substrate is one of a conductive substrate and a non-conductive substrate.
12 . The light emitting device of claim 11 , wherein when the substrate is the conductive substrate, the first electrode is formed on the conductive substrate.